Synthesis and Characterization of Tin Disulfide (SnS2) Nanowires

Lin, Yating; Shi, Jen–Bin; Chen, Yu‐Cheng; Chen, Chih‐Jung; Wu, Pei-Fang

doi:10.1007/s11671-009-9299-5

Cited by 88 publications

(43 citation statements)

References 21 publications

(21 reference statements)

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“…The thickness of each of these films was roughly on the order of 1 -2 microns. For the case with 2% tin, the film is found to be amorphous as there are no sharp peaks presented in the spectrum, but as the atomic concentration of Sn in the thin films increases, peaks assignable to either GeS 2 or SnS 2 begin to appear in the spectrum [8] [10] [11]. As the percentage of Sn increases the peaks generally become sharper and narrower, and reflect the published values for crystalline SnS 2 .…”

Section: Xrd Resultsmentioning

confidence: 93%

The Effect of Tin on PECVD-Deposited Germanium Sulfide Thin Films for Resistive RAM Devices

Rodriguez¹,

Poulter²,

González³

et al. 2017

MSA

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Resistive RAM is a promising, relatively new type of memory with fast switching characteristics. Metal chalcogenide films have been used as the amorphous semiconductor layer in these types of devices. The amount of crystallinity present in the films may be important for both reliable operation and increased longevity of the devices. Germanium sulfide films can be used for these devices, and a possible way to tune the crystalline content of the films is by substituting Sn for some of the Ge atoms in the film. Thin films of Ge x Sn y S z containing varying amounts of tin were deposited in a plasma enhanced chemical vapor deposition reactor. Films with 2%, 8%, 15%, 26%, and 34% atomic percentage Sn were deposited to determine crystallinity and structural information with XRD and Raman spectroscopy. Based on these depositions it was determined that at about 8% Sn content and below, the films were largely amorphous, and at about 26% Sn and above, they appeared to be largely crystalline. At 15% Sn composition, which is between 8% and 26%, the film is more a mixture of the two phases. Based on this information, current-voltage (IV) curves of simple memory switching devices were constructed at 5% Sn (in the amorphous region), at 25% Sn (in the crystalline region), and at 15% (in the mixed region). Based on the IV curves from these devices, the 15% composition gave the best overall switching behavior suggesting that a certain degree of order in the semiconductor layer is important for RRAM devices.

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Section: Xrd Resultsmentioning

confidence: 93%

The Effect of Tin on PECVD-Deposited Germanium Sulfide Thin Films for Resistive RAM Devices

Rodriguez¹,

Poulter²,

González³

et al. 2017

MSA

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“…19,20 However there are some reports on the one dimensional SnS 2 such as nanorods, 21 nanotubes, 22 nanobelts, 23 and nanowires. 24 Intensive investigations have revealed that three dimensional structures composed by low dimensional elements have remarkably enhanced electrochemical properties compared to those composed by high-dimensional ones, owing to the nanoscale characteristics that include large surface areas, finite lateral sizes, and enhanced open edge morphologies. 23 Most of the reported three dimensional SnS 2 structures are composed by two dimensional SnS 2 .…”

Section: Introductionmentioning

confidence: 99%

SnS<sub>2</sub> Urchins as Anode Material for Lithium-ion Battery

Zhang¹,

Zhan²,

Xie

et al. 2016

Electrochemistry

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SnS 2 urchins self-assembled by one dimensional nanorods, being different from the two dimensional flakes, were synthesized by a facile method to work as an anode material in lithium-ion battery. The SnS 2 urchins displayed a stable capacity of 600 mAh g −1 at the current density of 100 mA g −1 after 50 cycles. The SnS 2 urchins showed better cyclic performance and rate capacity compared with SnS 2 flakes. The improved performance was ascribed to the three dimensional structures which can decrease the volume expansion/contraction of SnS 2 during cycling; the fatal drawbacks of SnS 2 were thus mitigated. The facile and economic preparation route may find suitable application to industrial mass production.

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“…SnS 2 nanostructure can be a new candidate for the application in solar cell [15,16]. Up to now, few literatures have been reported using SnS 2 as anode material in DSSCs since the band gap of the as-synthesized SnS 2 is below 3 eV [17][18][19] until SnS 2 nanowires (3.3 eV) and SnS 2 crystalline nanoparticles of 15 nm (3.5 eV) are synthesized [18,20].…”

Section: Introductionmentioning

confidence: 99%