In this paper, we report on the growth of InSb on (100) Si and (1 1 1)B GaAs substrates and the growth of InAsSb alloysfor longer wavelength applications. The fabrication and characterization of photodetectors based on these materials are also reported. Both photoconductive and photovoltaic devices are investigated. The photodiodes are InSb p-i-n structures and InSMnAsSb,jInSb double heterostructures grown on (100) and (1 1 1)B semi-insulating GaAs and Si substrates by low pressure metalorganic chemical vapor deposition (LP-MOCVD) and solid source molecular beam epitaxy (MBE). The material parameters for device structures have been optimized through theoretical calculations based on fundamental mechanisms. InSb p-i-n photodiodes with peak responsivities -1O V/W were grown on Si and (1 1 1) GaAs substrates. AnInAsSb photovoltaic detector with a composition of x 0.85 showed photoresponse up to 13 xm at 300 K with a peak responsivity of 9. 13x 102 VJW at 8 jim. The RA product of InAsSb detectors has been theoretically and experimentally analyzed.
We report the first demonstration of InAsSb/AlInSb double heterostructure detectors for room temperature operation. The structures were grown in a solid source molecular beam epitaxy reactor on semi-insulating GaAs substrate. The material was processed to 400x400 im mesas using standard photolithography, etching, and metalization techniques. No optical immersion or surface passivation was used. The photovoltaic detectors showed a cutoff wavelength at 8im at 300K. The devices showed a high quantum efficiency of 40% at 7.im at room temperature. A responsivity of 300 mA/W was measured at 7.tm under a reverse bias ofO.25 V at 300K resulting in a Johnson noise limited detectivity of2xlO8 cmHz'2/W.
In this paper, we report on the growth and characterization of InAsSb alloys on GaAs and Si substrates for uncooled infrared photodetector applications. The fabrication and characterization of photodetectors from the grown layers are also reported. The photovoltaic and photoconductive devices were grown on (100) GaAs and Si substrates, respectively, using molecular beam epitaxy (MBE). The composition of InAs1Sb layers was 0.95 in both cases and cut-off wavelength of 7-8 jim has been obtained. At 300 K, the photovoltaic detectors on GaAs substrates resulted in a sharp cut-off wavelength of 7.5 im with a peak responsivity as high as 0.32 V/W at 6.5 tm. For the photoconductive detectors on Si substrates, cut-off wavelength of 8 tm has been observed with a responsivity of6.3x102 V/W at 7 tm under an electric field of420 Vim.
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