&lt;title&gt;Sb-based infrared materials and photodetectors for the near-room-temperature applications&lt;/title&gt;

Kim, Jedon D.; Michel, E.; Mohseini, H.; Wojkowski, J.; Lee, J. J.; Razeghi, Manijeh

doi:10.1117/12.271212

Cited by 3 publications

(8 citation statements)

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“…On the assumption that the photons with energy lower than E g, GaSb all cross GaSb without any weakening, the main absorption appears in the Ga 0. 8 The maximum value of D * is obtained at l = 2.32 mm for the N 1 ±n 2 ±p structure with the frontside illuminated case and for the P 1 ±p 2 ±n structure with the backside illuminated case. In the following, the detectivity for the above two cases is calculated at l = 2.32 mm.…”

Section: Resultsmentioning

confidence: 99%

“…8 which all photons with the energy lower than the material bandgap are assumed to cross this material and to reach the next material without any loss. That is, the weakening of the incident light due to impurity absorption and lattice scattering etc.…”

Section: Resultsmentioning

confidence: 99%

“…In the expression of quantum efficiency, the absorption coefficients of the n-and p-type Ga 0. 8 = built-in field in the n-type material V dp = built-in field in the p-type material a p = absorption coefficient in the p-type material a n = absorption coefficient in the n-type material t = width of the n-type material d = width of the p-type material s = trap capture cross section N f = trap density K = Boltzmann's constant T = detector working temperature q = electronic charge E g = material energy bandgap A * = 4pm * qK …”

Section: A) Frontside Illuminated Casementioning

confidence: 97%

“…There has been much interest in the use of the GaInAsSb quaternary alloy system as an alternative to MCT driven by the advanced material growth and processing technology. This quaternary alloy system will provide room temperature IR detectors adjustable over the 1.7 to 4.5 mm wavelength range [7,8]. With proper device design, both the cut-on and cut-off wavelength can be tailored.…”

Section: Introductionmentioning

confidence: 99%

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The Analysis of the Performance for P–p–n and N–n–p Hetero- and Homojunction GaSb/Ga0.8In0.2As0.19Sb0.81 Photodetectors

Tian¹,

Zhang

Zhou

et al. 1999

phys. stat. sol. (a)

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In this paper, the performance is analyzed for the P1–p2–n and N1–n2–p hetero‐ and homojunction GaSb/Ga0.8In0.2As0.19Sb0.81 photodetectors operated at 300 K, based on the incident wavelength and the parameters of GaSb and Ga0.8In0.2As0.19Sb0.81. The analyzed results show that the detectivity is much higher with the light incident first through the p‐type than first through the n‐type Ga0.8In0.2As0.19Sb0.81 for both structures. In addition, the carrier concentration of GaSb should be as low as possible to reduce the tunneling noise through the P1–p2 and N1–n2 heterojunctions. With the same condition for the two structures, the N1–n2–p structure is more advantage than the P1–p2–n structure because the high P1–p2 heterojunction recombination velocity increases the Auger and radiative noise mechanisms, which limit the performance of photodetectors.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: A) Frontside Illuminated Casementioning

confidence: 97%

Section: Introductionmentioning

confidence: 99%

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The Analysis of the Performance for P–p–n and N–n–p Hetero- and Homojunction GaSb/Ga0.8In0.2As0.19Sb0.81 Photodetectors

Tian¹,

Zhang

Zhou

et al. 1999

phys. stat. sol. (a)

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“…Photoconductors. Uncooled and Peltier-cooled long wavelength photoconductors were obtained at the Center of Quantum Devices [75][76][77]. The devices are based on p-InAsSb/ p-InSb heterostructures, MOCVD-grown on InSb-buffered GaAs substrates.…”

Section: Bulk Inassb Detectorsmentioning

confidence: 99%

Recent advances in manufacturing of miniaturized uncooled IR detection modules

Kalinowski

Mikołajczyk

Piotrowski

et al. 2019

Semicond. Sci. Technol.

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This paper reports on recent progress in infrared detection modules that integrate infrared photodetectors, signal processing electronics, optics, heat dissipation systems, and other components in common packages. The integration makes detectors less vulnerable to over-bias, electrostatic discharges, electromagnetic interferences, and other environmental exposures. Additional advantages of integration are improved HF performance, output signal standardization, miniaturization, and cost reduction. Examples are given of detection modules with an infrared detector optimized for uncooled or Peltier-cooled operation in the spectral range of 2 to 16 μm. The paper is mainly based on the authors' experience in the development and fabrication of detection modules at Vigo System S.A.

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Fabrication and Study Se/Sb on Silicon Detector Heterojunction

Z. Yahiya

2008

ETJ

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The optical response characteristics of Se/Sb thin film heterojunction deposited on a p-type silicon substrate were studied. Results indicated that the obtained isotype heterojunction is linearly graded and has 0.8V built-in potential. Also, the maximum spectral responsivity and maximum quantum efficiency were obtained at the region of (600-650) nm and the detectivity was about 7.77x10 10 cm.Hz 1/2 .W -1 . Response time of the manufactured detector was about 225ns. This work is a good attempt to manufacture the heterojunction detector from V and VI elements.

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<title>Sb-based infrared materials and photodetectors for the near-room-temperature applications</title>

Cited by 3 publications

References 0 publications

The Analysis of the Performance for P–p–n and N–n–p Hetero- and Homojunction GaSb/Ga0.8In0.2As0.19Sb0.81 Photodetectors

The Analysis of the Performance for P–p–n and N–n–p Hetero- and Homojunction GaSb/Ga0.8In0.2As0.19Sb0.81 Photodetectors

Recent advances in manufacturing of miniaturized uncooled IR detection modules

Fabrication and Study Se/Sb on Silicon Detector Heterojunction

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