Fabrication and Study Se/Sb on Silicon Detector Heterojunction

Abstract

The optical response characteristics of Se/Sb thin film heterojunction deposited on a p-type silicon substrate were studied. Results indicated that the obtained isotype heterojunction is linearly graded and has 0.8V built-in potential. Also, the maximum spectral responsivity and maximum quantum efficiency were obtained at the region of (600-650) nm and the detectivity was about 7.77x10 10 cm.Hz 1/2 .W -1 . Response time of the manufactured detector was about 225ns. This work is a good attempt to manufacture the heterojunction detector from V and VI elements.