Sb-based infrared materials and photodetectors for the 3-5 and 8-12 μm range

Abstract

In this paper, we report on the growth of InSb on (100) Si and (1 1 1)B GaAs substrates and the growth of InAsSb alloysfor longer wavelength applications. The fabrication and characterization of photodetectors based on these materials are also reported. Both photoconductive and photovoltaic devices are investigated. The photodiodes are InSb p-i-n structures and InSMnAsSb,jInSb double heterostructures grown on (100) and (1 1 1)B semi-insulating GaAs and Si substrates by low pressure metalorganic chemical vapor deposition (LP-MOCVD) and solid source molecular beam epitaxy (MBE). The material parameters for device structures have been optimized through theoretical calculations based on fundamental mechanisms. InSb p-i-n photodiodes with peak responsivities -1O V/W were grown on Si and (1 1 1) GaAs substrates. AnInAsSb photovoltaic detector with a composition of x 0.85 showed photoresponse up to 13 xm at 300 K with a peak responsivity of 9. 13x 102 VJW at 8 jim. The RA product of InAsSb detectors has been theoretically and experimentally analyzed.

Overview of antimonide based III-V semiconductor epitaxial layers and their applications at the center for quantum devices

“…Table 4.3 shows the responsivity-area product and resistance-area product of the InAs 0.15 Sb 0.85 photodiode at various temperatures [31]. At high temperatures, the R o A products were close to the value set by Auger-limited process, but they were far below the calculated values at low temperatures, as shown in the plot in Figure 4.17.…”