Overview of antimonide based III-V semiconductor epitaxial layers and their applications at the center for quantum devices

Abstract

Abstract. The properties of Sb-based III-V semiconductor compounds for optoelectronic applications in the mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) range were reviewed. The growths of the Sb-based binary, ternary and quaternary were studied by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD). The structural, optical and electrical characterizations were carried out. Focal plane array, photoconductors and photodiodes were fabricated for the MWIR and LWIR range. Doublehetero structure (DH), multi-quantum well (MQW) and strained superlattice (SSL) lasers in the 3-5 µm range were fabricated. InAs-GaSb type-II superlattices were designed, grown and fabricated into photodetectors for the MWIR and LWIR range.

Mass-spectrometric monitoring of the thermally induced decomposition of trimethylgallium, tris(tert-butyl)gallium, and triethylantimony at low pressure conditions

“…Reaction (2) shows the recombination of two ethyl radicals to form n-butane, while (3) shows disproportionation to form desorbed ethene and ethane. ␤-Hydride elimination leads to the desorption of ethene (4) and the formation of surface hydrogen that can recombine with an adjacent ethyl group to desorb as ethane molecule (5).…”

“…(J Am Soc Mass Spectrom 2008, 19, 947-954) A ntimony-based III-V semiconductors receive a widespread attention because of their advantageous narrow-band gap allowing the development of thermophotovoltaic devices [1, 2], the attainment of low power consumption electronic devices operating at high-frequency [3], and of light-emitting diodes operating in the 1.6 -4.4 m spectral range [4]. The growth of these materials starting from metalorganic precursors and using vapor-phase techniques such as molecular beam epitaxy (MBE), chemical vapor deposition (CVD), and vapor-phase epitaxy are extensively investigated and reported in valuable reviews [5][6][7]. For the growth of gallium antimonide, alkyl derivates are widely used as metal precursors.…”

“…The growth of these materials starting from metalorganic precursors and using vapor-phase techniques such as molecular beam epitaxy (MBE), chemical vapor deposition (CVD), and vapor-phase epitaxy are extensively investigated and reported in valuable reviews [5][6][7]. For the growth of gallium antimonide, alkyl derivates are widely used as metal precursors.…”

Modified LPE technique growth and properties of long wavelength InAs0.05Sb0.95 thick film

“…InAs 1−x Sb x has the smallest band gap among all conventional III-V alloys [1][2][3], which has attracted extensive interest for long-wavelength (8-12 m) optoelectronic applications. In recent years, ternary InAs 1−x Sb x has shown its potential usefulness for 8-12 m room-temperature devices [4][5][6].…”

Progress in Antimonide Based III-V Compound Semiconductors and Devices

“…The unique band structure and excellent physical properties of ABCS based materials provide great freedom and flexibility for band engineering and structural design of materials and create a broad space for development of high-performance microelectronics, opto-electronic devices and integrated circuits. Applications could include active-array space-based radar, satellite communications, ultra-high-speed and ultra-low power integrated circuits, portable mobile devices, gas environmental monitoring, chemical detection, bio-medical diagnosis, drug analysis and other fields [1][2][3][4][5][6][7][8].…”