Progress in Antimonide Based III-V Compound Semiconductors and Devices

Abstract

In recent years, the narrow bandgap antimonide based compound semiconductors (ABCS) are widely regarded as the first candidate materials for fabrication of the third generation infrared photon detectors and integrated circuits with ultra-high speed and ultra-low power consumption. Due to their unique bandgap structure and physical properties, it makes a vast space to develop various novel devices, and becomes a hot research area in many developed countries such as USA, Japan, Germany and Israel etc. Research progress in the preparation and application of ABCS materials, existing problems and some latest results are briefly introduced.

Controlling the Electro-Optical Properties of an AlSb Monolayer with a DLHC Structure through Phosphorus Alloying: A DFT Study

“…Furthermore, comprehensive studies based on experimental analysis and density functional theory (DFT) , calculations for 2D-III–V monolayer compounds such as BN, AlN, GaN, and InN demonstrate that these compounds in a honeycomb structure, with exceptional optical and electronic properties and wide bandgap, are more energetically stable . It is well known that antimony-based compounds − such as GaSb, InSb, and AlSb are medium- to large-bandgap semiconductors, and they have been shown to have the potential to be alternative low-cost high-temperature semiconducting materials and for Li-ion batteries as an anode material . It is worthy to note that 2D aluminum antimonide (AlSb) has been broadly investigated using experimental and theoretical techniques due to its excellent performance. − According to the literature, the synthesis of single-phase AlSb has been reported to be more challenging than other antimony-based compounds.…”