Modified LPE technique growth and properties of long wavelength InAs0.05Sb0.95 thick film

High quality of InAsSb epilayer with cutoff wavelength longer than 10μm grown on GaAs by the modified LPE technique

“…(1) given by Wieder and Clawson. A strong band gap narrowing for this alloy has also been observed for InAsSb epilayer on InAs substrate grown by the modified LPE technique [10]. The band gap narrowing could be related to the special growth mode of the modified LPE technique, a growth technique lying between bulk and epitaxial growth mode.…”

“…Prior to growth, GaAs substrates were chemically etched using the etching solution of H 2 SO 4 :H 2 O 2 :H 2 O=3:1:1. The detailed growth process of the modified LPE technique has been provided in a previous paper [10]. Annealing temperature was 500 1C while the annealing time was 10 h. After annealing, the furnace was cooled down at cooling rate of 50 1C/h.…”

LPE growth and characterization of mid-infrared InAs0.85Sb0.15 film on InAs substrate

“…In addition, optical properties of the epilayers are also affected by the growth conditions. For instance, the cutoff wavelength (l $ 8.27 mm) of InAs 0.05 Sb 0.95 grown by the Bridgeman method [26] is shorter than the cutoff wavelength of InAs 0.05 Sb 0.95 (l $ 12.5 mm) grown by modified LPE [27]. The inset in Fig.…”

Single crystalline InAsxSb1−x films with cut-off wavelength of 7–8μm grown on (100) InSb substrates by liquid phase epitaxy

“…It is, however, extremely difficult to obtain good quality InAs x Sb 1 À x epilayers by LPE when the lattice mismatch between the epilayer and the substrate is larger than 1%. Thick InAs 0.05 Sb 0.95 film more than 100 lm can be obtained on high lattice mismatched substrate, such as InAs and GaAs, by modified LPE method, but only polycrystalline epilayer can be prepared [15,16]. The most suitable substrate for LPE growth of InSb-based InAsSb is InSb [17,18].…”