LPE growth and characterization of mid-infrared InAs0.85Sb0.15 film on InAs substrate

The complete absorption spectra of InAs0.87Sb0.13 films grown by liquid phase epitaxy

“…1 shows the (4 0 0) 2Â-ω HRXRD scans for Samples S1 (InAs 1−x1 Sb x1 /InAs) and S2 (InAs 1−x2 Sb x2 /InAs 1−x1 Sb x1 /InAs) (x1 < 0.10 < x2). As listed in Table 1, the FWHMs of Samples S1 and S2 range from 270 to 320 , which are much smaller than the reported values [7,8], indicating the high crystalline quality of InAs 1−x Sb x epilayers. The lattice constants of epilayers can be deduced from Bragg diffraction equation.…”

Growth and characterization of InAsSb layers on GaSb substrates by liquid phase epitaxy

“…In order to reduce the non-radiation recombination defects and improve the electrical properties of the optoelectronic devices, it is necessary to yield high purity materials as active region for fabricating good quality devices. InAs 1 À x Sb x ternary semiconductor with a full composition range (0 ox o1) had been successfully grown by molecular beam epitaxy (MBE) [3,4] and metal organic chemical vapor deposition (MOCVD) [5,6]. As a simpler technique, liquid phase epitaxy (LPE) is appropriate for the fabrication of InAsSb optoelectronic devices due to high quality films grown at thermodynamic equilibrium.…”

“…Unfortunately, high quality layer grown by LPE can only be obtained when the lattice mismatch between the semiconductor film and the substrate is very small (typically less than 1%). Thus, suitable substrates for LPE growth of InAs 1 À x Sb x include only InAs, InSb and GaSb [5][6][7]. High crystalline quality of epitaxial layers of composition InAs 0.91 Sb 0.09 have been grown on GaSb substrates by LPE with a bandgap energy corresponding to 4.2 μm at room temperature, which is of interest for the fabrication of optoelectronic components for use in infrared CO 2 sensors [8].…”

High-purity InAs1-Sb epilayer grown by a LPE technique

“…One of the main potential applications of InAs 1-x Sb x material is the fabrication of photodetectors for the 2-5 μm wavelength range [1,2]. It is necessary to yield high resistivity and high-purity material as active region for fabricating good quality devices.…”