Articles you may be interested inErratum "Effects of NH 3 pulse plasma on atomic layer deposition of tungsten nitride diffusion barrier [J.Diffusion barrier properties of metalorganic chemical vapor deposition -WN x compared with other barrier materials J.Low temperature metal-organic chemical vapor deposition of tungsten nitride as diffusion barrier for copper metallization J.
ERRATAErratum: ''Low temperature metalorganic chemical vapor deposition of tungsten nitride as diffusion barrier for copper metallization'' †J.
Erratum: "Low temperature metalorganic chemical vapor deposition of tungsten nitride as diffusion barrier for copper metallization" [J.Investigation on multilayered chemical vapor deposited Ti/TiN films as the diffusion barriers in Cu and Al metallization J.
Results are reported from an investigation of the effects of selected processing parameters on the morphology and properties of YBa2Cu3O7−δ (YBCO) superconducting thin films grown directly on polycrystalline silver substrates by chemical-vapor deposition (CVD). These results were achieved through a set of experimental studies which examined: (i) recrystallization mechanisms of polycrystalline silver and their effect on the deposition of YBCO thin films; and (ii) CVD processing conditions leading to the growth of high-quality YBCO films. The samples were analyzed using dynamic impedance, four-point resistivity probe, x-ray diffraction, Rutherford backscattering, and scanning electron microscopy. These studies showed that substrate temperature played a critical role not only in the formation of YBCO films, but also in the recrystallization of silver substrates, which in turn greatly influenced film growth. The studies also led to the identification of a two-stage processing scheme for the growth of YBCO films on silver. The first processing stage consisted of a substrate conditioning cycle which involved a 10 min ramping from room temperature to deposition temperature where the substrates were held for an additional 10 min in a flow of 70 sccm O2 at a reactor working pressure of 2 Torr. The second processing stage involved actual film deposition at 760–800 °C for 3–10 min (depending on desired film thickness) in a mixed flow of 70 sccm O2 and 210 sccm N2O at a reactor working pressure of 4 Torr. Samples thus produced were highly oriented along the c axis perpendicular to the substrate with a zero resistance transition temperature of 87 K and a critical current density of 2×104 A/cm2 (77 K, B=0). The films had a thickness of 200–700 nm depending on the length of the growth cycle, which corresponded to the growth rates in the range 65–130 nm/min. A growth mechanism for YBCO on polycrystalline silver, which emphasized the role of silver recrystallization, was consequently proposed and discussed.
The identification of viable diffusion barrier/adhesion promoter material and associated deposition processes is a critical factor in the successful development of structurally and electrically reliable copper based metallization schemes. As feature sizes continue shrinking, such materials are expected to delivery enhanced performance at increasingly thinner layers to allow maximum space utilization by the actual conductor. In this respect, Ta and W based binary and ternary nitrides present promising solutions in view of their hardness, chemical inertness, and thermal stability to high temperatures. Additionally, their availability in amorphous form provides the added benefit of inherent absence of grain boundaries, which usually serve as a primary diffusion path. This paper presents finds from the development of low0temperature (,350°C) CVD processes for the growth of ultrathin Ta, W, Ta-Si, and WSinitride layers for sub−0.18 micron device structures. These processes employ novel inorganic and metal-organic source precursors which allow for the in-situ, one-step, growth of binary and ternary nitrides from appropriate mixtures of the corresponding source precursors. Results will also be discussed from diffusion barrier studies which established performance metris for the applicability of such materials in copper interconnect technologies.
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