Erratum: “Low temperature metalorganic chemical vapor deposition of tungsten nitride as diffusion barrier for copper metallization” [J. Vac. Sci. Technol. B 17, 1101 (1999)]

Kelsey, Jean E.; Goldberg, C.; Nuesca, Guilleromo; Peterson, Gregory; Kaloyeros, Alain E.; Arkles, Barry

doi:10.1116/1.590892

Cited by 18 publications

(26 citation statements)

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“…However, during the reactive direct current (DC) sputtering process, the vacuum chamber can be deposited by an insulative layer which causes "anode vanished". This problem may contribute to discharge process unstable and makes the structures and composition of thin film uncontrollable [9,10]. In the present years, dual magnetrons are usually used to solve this problem.…”

Section: Introductionmentioning

confidence: 99%

Influence of substrate bias voltage on the microstructure and residual stress of CrN films deposited by medium frequency magnetron sputtering

Kong

et al. 2011

Materials Science and Engineering: B

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Section: Introductionmentioning

confidence: 99%

Influence of substrate bias voltage on the microstructure and residual stress of CrN films deposited by medium frequency magnetron sputtering

Kong

et al. 2011

Materials Science and Engineering: B

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“…17,18 Later, tungsten nitride was prepared by adopting a replacement reaction where oxides or sulphides were heated in presence of HN 3 at a high temperature 600 to 900 o C. 10,18 Thin films of tungsten nitride were successfully deposited, however limited, by chemical and physical vapor deposition methods. [19][20][21][22] Klaus et. al.…”

Section: Introductionmentioning

confidence: 99%

Atomic layer deposited tungsten nitride thin films as a new lithium-ion battery anode

Nandi

Sen

Sinha

et al. 2015

Phys. Chem. Chem. Phys.

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This article demonstrates the atomic layer deposition (ALD) of tungsten nitride using tungsten hexacarbonyl [W(CO)6] and ammonia [NH3] and its use as a lithium-ion battery anode. In situ quartz crystal microbalance (QCM), ellipsometry and X-ray reflectivity (XRR) measurements are carried out to confirm the self-limiting behaviour of the deposition. A saturated growth rate of ca. 0.35 Å per ALD cycle is found within a narrow temperature window of 180-195 °C. In situ Fourier transform infrared (FTIR) vibrational spectroscopy is used to determine the reaction pathways of the surface bound species after each ALD half cycle. The elemental presence and chemical composition is determined by XPS. The as-deposited material is found to be amorphous and crystallized to h-W2N upon annealing at an elevated temperature under an ammonia atmosphere. The as-deposited materials are found to be n-type, conducting with an average carrier concentration of ca. 10(20) at room temperature. Electrochemical studies of the as-deposited films open up the possibility of this material to be used as an anode material in Li-ion batteries. The incorporation of MWCNTs as a scaffold layer further enhances the electrochemical storage capacity of the ALD grown tungsten nitride (WNx). Ex situ XRD analysis confirms the conversion based reaction mechanism of the as-grown material with Li under operation.

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“…Copper is not only a fast diffuser in silicon and SiO 2 , but it forms low‐temperature silicides and midgap traps, recombination centers, and reduces minority carrier lifetimes . Many investigations have been carried out using various metals and compounds to prevent copper from diffusing into silicon or SiO 2 . These single element diffusion barriers include Ta, W, Ni, Cr, Ti, Nb, Co, and Mo.…”

Section: Current State Of the Art In Diffusion Barriers For Microelecmentioning

confidence: 99%

“…[ 106 ] Many investigations have been carried out using various metals and compounds to prevent copper from diffusing into silicon or SiO 2 . [119][120][121][122][123][124][125][126][127][128][129] These single element diffusion barriers include Ta, W, Ni, Cr, Ti, Nb, Co, and Mo. Refractory materials for diffusion barriers have small 2016, 12, No.…”

Section: Synthesis Of Graphene-based Barriersmentioning

confidence: 99%

Review of Graphene as a Solid State Diffusion Barrier

Morrow

Pearton

Ren

2015

Small

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Conventional thin-film diffusion barriers consist of 3D bulk films with high chemical and thermal stability. The purpose of the barrier material is to prevent intermixing or penetration from the two materials that encase it. Adhesion to both top and bottom materials is critical to the success of the barrier. Here, the effectiveness of a single atomic layer of graphene as a solid-state diffusion barrier for common metal schemes used in microelectronics is reviewed, and specific examples are discussed. Initial studies of electrical contacts to graphene show a distinct separation in behavior between metallic groups that strongly or weakly bond to it. The two basic classes of metal reactions with graphene are either physisorbed metals, which bond weakly with graphene, or chemisorbed metals, which bond strongly to graphene. For graphene diffusion barrier testing on Si substrates, an effective barrier can be achieved through the formation of a carbide layer with metals that are chemisorbed. For physisorbed metals, the barrier failure mechanism is loss of adhesion at the metal–graphene interface. A graphene layer encased between two metal layers, in certain cases, can increase the binding energy of both films with graphene, however, certain combinations of metal films are detrimental to the bonding with graphene. While the prospects for graphene's future as a solid-state diffusion barrier are positive, there are open questions, and areas for future research are discussed. A better understanding of the mechanisms which influence graphene's ability to be an effective diffusion barrier in microelectronic applications is required, and additional experiments are needed on a broader range of metals, as well as common metal stack contact structures used in microelectronic applications. The role of defects in the graphene is also a key area, since they will probably influence the barrier properties.

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Erratum: “Low temperature metalorganic chemical vapor deposition of tungsten nitride as diffusion barrier for copper metallization” [J. Vac. Sci. Technol. B 17, 1101 (1999)]

Cited by 18 publications

References 0 publications

Influence of substrate bias voltage on the microstructure and residual stress of CrN films deposited by medium frequency magnetron sputtering

Influence of substrate bias voltage on the microstructure and residual stress of CrN films deposited by medium frequency magnetron sputtering

Atomic layer deposited tungsten nitride thin films as a new lithium-ion battery anode

Review of Graphene as a Solid State Diffusion Barrier

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