We use femtosecond laser pulses to generate coherent longitudinal acoustic phonons at frequencies of 1–1.4 THz and study their propagation in GaN-based structures at room temperature. Two InGaN-GaN multiple-quantum-well (MQW) structures separated by a 2.3 μm-thick GaN spacer are used to simultaneously generate phonon wave packets with a central frequency determined by the period of the MQW and detect them after passing through the spacer. The measurements provide lower bounds for phonon lifetimes in GaN, which are still significantly lower than those from first principles predictions. The material Q-factor at 1 THz is found to be at least as high as 900. The measurements also demonstrate a partial specular reflection from the free surface of GaN at 1.4 THz. This work shows the potential of laser-based methods for THz range phonon spectroscopy and the promise for extending the viable frequency range of GaN-based acousto-electronic devices.

We report measurements of room-temperature mean free paths of long-lived THz acoustic phonons in wurtzite GaN. Longitudinal phonon wavepackets are excited and probed by femtosecond laser pulses in two InGaN-GaN multiple quantum well structures separated by a GaN layer. By measuring the temperature dependence of the phonon attenuation in the range 80-300 K we isolate the intrinsic phonon mean free path at 300 K which is found to be 5.3 and 3.5 μm at 1.06 and 1.43 THz, respectively. The measurements are found to be in a good agreement with ab initio calculations which show that the main channel of the acoustic phonon decay is a three-phonon scattering process involving the acoustic phonon and two high-frequency optical phonons. Our results indicate that the contribution of low-THz acoustic phonons to thermal transport in GaN is relatively smaller than in Si, thus finite size effects are expected to be less important in GaN.

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