Epitaxial growth of (111)-oriented Zr Ti1−N thin films on c-plane Al2O3 substrates

Li, Ruiteng; Gandhi, Jateen S.; Pillai, R.; Forrest, R. L.; Starikov, D.; Bensaoula, A.

doi:10.1016/j.jcrysgro.2014.06.043

Cited by 6 publications

(3 citation statements)

References 41 publications

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“…These cubic transition metal mononitrides are particularly appealing for electronic applications since they can be epitaxially grown on substrates commonly used for other electronic materials, such as MgO, Al 2 O 3 , and Si. [19][20][21][22][23][24][25] Furthermore, (111) planes of transition metal mononitride rocksalts are also structurally compatible with (0001) GaN surfaces. For example, thin ScN buffer layers have been shown to improve the quality of electronics-grade GaN films 26) and heteroepitaxy has been recently demonstrated between semiconducting GaN and superconducting NbN.…”

Section: Introductionmentioning

confidence: 94%

Composition, structure, and semiconducting properties of Mg _x Zr_2−xN₂ thin films

Bauers

Hamann

Patterson

et al. 2019

Jpn. J. Appl. Phys.

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Synthesis and characterization of Mg x Zr 2−x N 2 (0.5 ⩽ x ⩽ 1.8) thin films deposited by reactive magnetron co-sputtering in nitrogen plasma is reported. Composition measurements show that nitrides with low oxygen content (less than 1%) can be formed up to x = 1.0, at which point an increase in oxygen content is observed. Up to composition of x = 1.6 the Mg x Zr 2−x N 2 thin films form in a rocksalt-derived crystal structure, as revealed by X-ray diffraction measurements. At x > 1.6 the films rapidly oxidize. The lattice constant of the stoichiometric MgZrN 2 composition is a = 4.537 Å, and only small changes in lattice parameter are observed with changing composition. Electrical conductivity decreases by several orders of magnitude with increasing Mg-content. The conductivity of Mg-rich (x ⩾ 1) films increases with increasing measurement temperature, indicating semiconducting character of Mg-rich Mg x Zr 2−x N 2 . Optical absorption measurements of these Mg-rich samples show a clear absorption onset at 1.8 eV, also indicative of semiconducting behavior.

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Section: Introductionmentioning

confidence: 94%

Composition, structure, and semiconducting properties of Mg _x Zr_2−xN₂ thin films

Bauers

Hamann

Patterson

et al. 2019

Jpn. J. Appl. Phys.

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“…This confirmed the epitaxial growth of the (111) Cr 1– x Me x N z films with the presence of twin domains, commonly observed for NaCl‐structured materials on c‐plane sapphire. [ 39–41 ] Figure 2b shows pole figure measurement of the same sample as (a), but with 2θ = 56.0°, which corresponds to the {11

{2}^{¯}

2}‐peaks of hexagonal phase ( a = 4.81 Å, c = 4.48 Å), verifying the secondary phase as Cr 2 N‐type hexagonal phase. While the substrate {11

{2}^{¯}

6}‐peaks also could be seen near this 2θ value and at ψ = 43.0°, such peaks would only demonstrate a threefold symmetry.…”

Section: Resultsmentioning

confidence: 93%

Phase Composition and Thermoelectric Properties of Epitaxial CrMoVN Thin Films

Hjort,

Singh,

Chowdhury

et al. 2023

Adv Energy and Sustain Res

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Thin films of CrMoVN are deposited on c‐plane sapphire (Al2O3 (0001)) by direct current reactive magnetron sputtering, to investigate the effects of Mo and V addition to CrN‐based films. All films grow epitaxially, but Mo incorporation affects the crystal structure and nitrogen content. All films in the CrMoVN series are understoichiometric in nitrogen, but largely retain the NaCl B1 structure of stoichiometric CrN films. Addition of vanadium increases the phase‐stability range of the cubic phase, allowing for higher solubility of Mo than what has previously been reported for cubic CrN. The Seebeck coefficient and electrical resistivity are greatly affected by the alloying, showing a decrease of the Seebeck coefficient along with a decrease in resistivity. Cr0.83Mo0.11V0.06Nz shows a 70% increase in power factor (S2σ = 0.22 mW m−1 K−2) compared to the reference CrNz (S2σ = 0.13 mW m−1 K−2).

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“…These films were part of the same deposition batches as in prior work where the epitaxial growth was demonstrated through pole figure analysis giving the following epitaxial relationship: ⟨0001⟩ s ||⟨111⟩ film (out of plane) and (112̅0) s ||(112̅) film or (1̅21̅0) s ||(112̅) film (in-plane) . NaCl-structured materials are well known for their epitaxial growth with twin domains on c -plane sapphire. − For the MP series, an additional, broad peak is observed around 40.5°, identified as a (0002) reflection from hexagonal Cr 2 N (PDF 00-035-0803) . The presence of Cr 2 N can be observed in CrN films when the nitrogen content decreases, which has been reported in several works. , …”

Section: Resultsmentioning

confidence: 99%

Influence of Ammonia Annealing on Cr–N Thin Films and Their Thermoelectric Properties

Hjort,

Tessier,

Giovannelli

et al. 2024

ACS Appl. Energy Mater.

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CrN-based thin films are emerging as thermoelectric materials for energy harvesting. Their thermoelectric properties depend on phase composition and stoichiometry, necessitating control over the nitrogen content and how it affects the phase composition.Here, the effect of high-temperature ammonia annealing on the thermoelectric properties as well as crystal structure of thin films of Cr−N on c-plane sapphire (Al 2 O 3 (0001)) was investigated. Single-phase (cubic CrN) and mix-phase (cubic CrN + hexagonal-Cr 2 N) Cr−N films were annealed in ammonia, converting any secondary phase of hexagonal Cr 2 N to cubic CrN. The thermoelectric properties of the films that contained a secondary phase of hexagonal Cr 2 N greatly improved upon annealing, with an increase of 900% to 0.5 × 10 −3 W m −1 K −2 for the film annealed at 800 °C for 2 h. Annealing of single-phase films of cubic CrN resulted in films with near-insulating electrical properties. For the thermoelectric applications of CrN, ammonia annealing can be beneficial over meticulous deposition control.

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Epitaxial growth of (111)-oriented Zr Ti1−N thin films on c-plane Al2O3 substrates

Cited by 6 publications

References 41 publications

Composition, structure, and semiconducting properties of Mg _x Zr_2−xN₂ thin films

Composition, structure, and semiconducting properties of Mg _x Zr_2−xN₂ thin films

Phase Composition and Thermoelectric Properties of Epitaxial CrMoVN Thin Films

Influence of Ammonia Annealing on Cr–N Thin Films and Their Thermoelectric Properties

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Epitaxial growth of (111)-oriented Zr Ti1−N thin films on c-plane Al2O3 substrates

Cited by 6 publications

References 41 publications

Composition, structure, and semiconducting properties of Mg x Zr2−x N2 thin films

Composition, structure, and semiconducting properties of Mg x Zr2−x N2 thin films

Phase Composition and Thermoelectric Properties of Epitaxial CrMoVN Thin Films

Influence of Ammonia Annealing on Cr–N Thin Films and Their Thermoelectric Properties

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Product

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Composition, structure, and semiconducting properties of Mg _x Zr_2−xN₂ thin films

Composition, structure, and semiconducting properties of Mg _x Zr_2−xN₂ thin films