InGaN/silicon heterojunction based narrow band near-infrared detector

Pillai, R.; Starikov, D.; Gandhi, Jateen S.; Debnath, Ananya I.; Li, Ruiteng; Boney, C.; Bensaoula, A.

doi:10.1116/1.4904760

Cited by 4 publications

(3 citation statements)

References 11 publications

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“…Notably, the FWHM at the same time can reach as low as 26 nm (Figure 2d). To our best knowledge, this presents the narrowest spectral response at 895 and 912 nm among the existing Si‐based NIR PDs according to literatures [ 41–45 ] as shown in Figure 2e. Also, we measured a commercial Si PD with an optical filter (NP900 nm) and the FWHM exhibits 59 nm (Figure S5, Supporting Information).…”

Section: Resultsmentioning

confidence: 83%

“…Herein, we report the development of a narrowband NIR PD based on nanograting Si/organic (PBDBT-DTBT:BTP-4F) integrated heterojunction devices, demonstrating a 40-fold enhanced external quantum efficiency (EQE), fast response of 74 μs with a FWHM as narrow as 26 nm, reaching the narrowest response peak by far among the existing Si-based NIR PDs. [41][42][43][44][45] The introduction of a conformal organic layer right above a Si nanopatterned substrate (Grating 1) has formed the secondary periodic nanograting (Grating 2) site, creating an inherently periodic microcavities for resonant enhancement to realize sharp and narrow band response peak. The response peak could be effectively tuned from 895 to 977 nm by increasing the thickness of the asdeposited organic layer.…”

Section: Introductionmentioning

confidence: 99%

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Si/Organic Integrated Narrowband Near‐Infrared Photodetector

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Min

et al. 2023

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Spectrally selective narrowband photodetection is critical for near‐infrared (NIR) imaging applications, such as for communicationand night‐vision utilities. It is a long‐standing challenge for detectors based on silicon, to achieve narrowband photodetection without integrating any optical filters. Here, this work demonstrates a NIR nanograting Si/organic (PBDBT‐DTBT:BTP‐4F) heterojunction photodetector (PD), which for the first time obtains the full‐width‐at‐half‐maximum (FWHM) of only 26 nm and fast response of 74 µs at 895 nm. The response peak can be successfully tailored from 895 to 977 nm. The sharp and narrow response NIR peak is inherently attributed to the coherent overlapping between the NIR transmission spectrum of organic layer and diffraction enhanced absorption peak of patterned nanograting Si substrates. The finite difference time domain (FDTD) physics calculation confirms the resonant enhancement peaks, which is well consistent with the experiment results. Meanwhile, the relative characterization indicates that the introduction of the organic film can promote carrier transfer and charge collection, facilitating efficient photocurrent generation. This new device design strategy opens up a new window in developing low‐cost sensitive NIR narrowband detection.

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Section: Resultsmentioning

confidence: 83%

Section: Introductionmentioning

confidence: 99%

Si/Organic Integrated Narrowband Near‐Infrared Photodetector

Sun

Min

et al. 2023

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“…12 At present, GaN-based detectors are mostly based on thin lm and bulk materials. 2,13,14 Compared with thin lms or bulk materials, nanowires (NWs) have larger surface-to-volume ratio, which will increase optical absorption and photogenerated carrier density. 15,16 However, very few detectors are based on vertical nanowires, not to mention the corresponding dual-wavelength photodetector.…”

Section: Introductionmentioning

confidence: 99%