A new micromachining technology of mechanically fixed and thermally insulated cantilevers, bridges and islands was developed to be used for design of GaAs heterostructure based microelectromechanical systems (MEMS) devices. Based on the micromachining technology, two different MEMS devices were designed and analyzed. The first one was micromechanical thermal converter (MTC) and the second one was a micromechanical coplanar waveguide (MCPW). The basic electro‐thermal as well as microwave properties of the MEMS devices designed are investigated. The results obtained are also supported by simulation. The advantages of the fixed micromechanical structures in the field of design of new MEMS devices are discussed.
In this article we describe the electron-beam direct-write (EBDW) lithography process for the AZ 5214E photoresist which is, besides its sensitivity to UV radiation, sensitive also to electrons. An adapted process flow is provided. At the same time we examine the resistance of this resist to RIE and its suitability as an etch-mask for etching thin Ag layers in N 2 plasma. A comparison with several chosen resists (PMMA, ma-2405, ma-N 1402, SU-8 2000 is provided.K e y w o r d s: AZ 5214E resist,
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