We report UV-photopolymerized “water-in-bisalt” electrolytes that expand the electrochemical stability window, improving “water-in-bisalt” cycle life in lithium titanate full cells.

We report the epitaxial growth of Bi 2 Se 3 thin films on (0001) Al 2 O 3 substrates by hybrid physicalchemical vapor deposition (HPCVD). The HPCVD technique combines the thermal decomposition of trimethylbismuth with the thermal evaporation of Se and leads to a high Se partial pressure in the growth ambient. The Bi 2 Se 3 films are highly c-axis oriented on sapphire but contain planar defects including stacking faults and twin boundaries. Variable-temperature Hall-effect measurements demonstrate a carrier concentration of 5.8 Â 10 18 cm À3 and a mobility of 900 cm 2 /Vs at 4.2 K. These results demonstrate the potential of HPCVD for producing high quality Bi 2 Se 3 films for topological insulator studies. V C 2012 American Institute of Physics. [http://dx.

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