We have measured the oxide growth of n-and p-type 6H-SiC epitaxial chemically vapor deposited (CVD) films and its dependence on doping concentration and temperature. We used wet oxidation in a temperature region from 1173 to 1723 K on as-grown (000]) surfaces [Si(0001)-face] of CVD grown 6H-SiC epitaxial layers on 6H-SiC substrates. All oxidations were carried out with the same parameters (6 h oxidation time, 1 arm O2 pressure, 11.1 sccm O~ flux, 90~ bubbler temperature). Samples with different doping concentrations were oxidized. For the n-type samples we used nitrogen-doped 6H-SiC with nitrogen concentrations from 2.5 9 1018 to 4.5 9 I0 ~8 cm -3. For p-type samples we used aluminum-doped 6H-SiC with aluminum concentrations from 7 -1017 to 7 9 1018 em -3. Oxide steps were produced by a photolithographic process followed by HF-etching. The oxide thickness was determined mechanically by measuring the oxide step-height. For oxidation temperatures from 1273 up to 1473 K and reaction-controlled oxide growth we observed that the oxide thickness increases with the Fermi energy of the sample.
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