The article shows the results of research directed to detection of technical facilities accidents and failures sources at their operation. The research aim is to create the effective tools for management of risks so the coexistence of technical facilities with their vicinity would be ensured throughout their life cycles. The problems solution way is based on the simultaneously preferred concept, in which the safety is preferred over the reliability. Respecting the present knowledge on technical facilities´ safety and the lessons learned from the past technical facilities accidents and failures, the causes of which were connected with their operation, two tools are developed: Decision Support System and Risk Management Plan that were reviewed by experts and tested in practice.
Using photoluminescence (PL) and current deep-level transient spectroscopy (I-DLTS), we investigated the electronic defects of indium-doped detector-grade CdMnTe:In (CMT:In) crystals grown by the vertical Bridgman method. We similarly analyzed CdZnTe:In (CZT:In) and undoped CdMnTe (CMT) crystals grown under the amount of same level of excess Te and/or indium doping level to detail the fundamental properties of the electronic defect structure more readily. Extended defects, existing in all the samples, were revealed by synchrotron white beam x-ray diffraction topography and scanning electron microscopy. The electronic structure of CMT is very similar to that of CZT, with shallow traps, A-centers, Cd vacancies, deep levels, and Te antisites. The 1.1-eV deep level, revealed by PL in earlier studies of CZT and CdTe, were attributed to dislocation-induced defects. In our I-DLTS measurements, the 1.1-eV traps showed different activation energies with applied bias voltage and an exponential dependence on the trap-filling time, which are typical characteristics of dislocation-induced defects. We propose a new defect-trap model for indium-doped CMT crystals.
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