2011
DOI: 10.1109/tns.2011.2159394
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Inclusions Elimination and Resistivity Restoration of CdTe:Cl Crystals by Two-Step Annealing

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Cited by 24 publications
(16 citation statements)
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“…It seems that the kinetics of CdTe material formation has this inherent property, and this has been confirmed by heat-treating these CdTe materials in Cd and Cl environment [40][41][42] by numerous researchers in the past during development of high resistivity CdTe for X-ray and γ-ray detectors. There is also excellent work showing that these Te precipitates are completely removed when these CdTe crystals are grown or treated in the presence of Cd or Cl [41]. The CdTe PV researchers need to use these findings in order to fully understand the CdCl 2 treatment.…”
Section: Te Precipitation In Cdtementioning
confidence: 86%
See 1 more Smart Citation
“…It seems that the kinetics of CdTe material formation has this inherent property, and this has been confirmed by heat-treating these CdTe materials in Cd and Cl environment [40][41][42] by numerous researchers in the past during development of high resistivity CdTe for X-ray and γ-ray detectors. There is also excellent work showing that these Te precipitates are completely removed when these CdTe crystals are grown or treated in the presence of Cd or Cl [41]. The CdTe PV researchers need to use these findings in order to fully understand the CdCl 2 treatment.…”
Section: Te Precipitation In Cdtementioning
confidence: 86%
“…Review of a large body of CdTe growth techniques reveals that Te precipitation in CdTe is a common issue [40][41][42]. Even melt-growth technique for growing bulk CdTe, show severe precipitation of Te in CdTe crystals.…”
Section: Te Precipitation In Cdtementioning
confidence: 99%
“…In the c-and X-ray detectors research work based on insulating and semi-insulating CdTe, it is well known that Te precipitation is common in CdTe material, irrespective of the growth technique [22][23][24][25][26]. It is also known that treatment similar to CdCl 2 , removes these precipitated Te [27].…”
Section: Discussionmentioning
confidence: 99%
“…Out of the two elements, Cd and Te in CdTe, Te is the easiest element to discharge first and deposit during electroplating (E o for Te is +0.593 V, and E o for Cd is -0.403 V). Therefore Te can be precipitated [12][13][14] within the layer or form a thin layer of Cd x TeO y on the surface [15]. Hence, most of the as-deposited CdTe layers have Te-rich nature and therefore T 1 , T 2 and T 3 trap levels are dominant.…”
Section: Effects On Materialsmentioning
confidence: 99%