Polyamide thickness and roughness have been identified as critical properties that affect thin-film composite membrane performance for reverse osmosis. Conventional formation methodologies lack the ability to control these properties independently with high resolution or precision. An additive approach is presented that uses electrospraying to deposit monomers directly onto a substrate, where they react to form polyamide. The small droplet size coupled with low monomer concentrations result in polyamide films that are smoother and thinner than conventional polyamides, while the additive nature of the approach allows for control of thickness and roughness. Polyamide films are formed with a thickness that is controllable down to 4-nanometer increments and a roughness as low as 2 nanometers while still exhibiting good permselectivity relative to a commercial benchmarking membrane.

Perovskite solar cells (PSCs) based on thin films of organolead trihalide perovskites (OTPs) hold unprecedented promise for low-cost, high-efficiency photovoltaics (PVs) of the future. While PV performance parameters of PSCs, such as short circuit current, open circuit voltage, and maximum power, are always measured at the macroscopic scale, it is necessary to probe such photoresponses at the nanoscale to gain key insights into the fundamental PV mechanisms and their localized dependence on the OTP thin-film microstructure. Here we use photoconductive atomic force microscopy spectroscopy to map for the first time variations of PV performance at the nanoscale for planar PSCs based on hole-transport-layer free methylammonium lead triiodide (CH3NH3PbI3 or MAPbI3) thin films. These results reveal substantial variations in the photoresponse that correlate with thin-film microstructural features such as intragrain planar defects, grains, grain boundaries, and notably also grain-aggregates. The insights gained into such microstructure-localized PV mechanisms are essential for guiding microstructural tailoring of OTP films for improved PV performance in future PSCs.

Mixing materials with different crystal structures leads to new phases that otherwise would require negative pressure to be made.

SignificanceIntrinsic and extrinsic properties of ferroelectric materials are known to have strong dependencies on electrical and mechanical boundary conditions, resulting in finite size effects at length scales below several hundred nanometers. In ferroelectric thin films, equilibrium domain size is proportional to the square root of film thickness, which precludes the use of present tomographic microscopies to accurately resolve complex domain morphologies in submicrometer films. We report a subtractive experimental technique with volumetric resolution below 315 nm3, that allows for three-dimensional, tomographic imaging of materials properties using only an atomic force microscope. Multiferroic BiFeO3 was chosen as a model system for illustrating the capabilities of tomographic atomic force microscopy due to its technological relevance in low-power, electrically switchable magnetic logic.

Spintronic elements based on spin transfer torque have emerged with potential for on-chip memory, but they suffer from large energy dissipation due to the large current densities required. In contrast, an electric-fielddriven magneto-electric storage element can operate with capacitive displacement charge and potentially reach 1-10 J cm 2 switching operation. Here, magnetoelectric switching of a magnetoresistive element is shown, operating at or below 200 mV, with a pathway to get down to 100 mV. A combination of phase detuning is utilized via isovalent La substitution and thickness scaling in multiferroic BiFeO3 to scale the switching energy density to 10 J cm 2. This work provides a template to achieve attojoule-class nonvolatile memories.

Domain switching pathways in ferroelectric materials visualized by dynamic piezoresponse force microscopy (PFM) are explored via variational autoencoder, which simplifies the elements of the observed domain structure, crucially allowing for rotational invariance, thereby reducing the variability of local polarization distributions to a small number of latent variables. For small sampling window sizes the latent space is degenerate, and variability is observed only in the direction of a single latent variable that can be identified with the presence of domain wall. For larger window sizes, the latent space is 2D, and the disentangled latent variables can be generally interpreted as the degree of switching and complexity of domain structure. Applied to multiple consecutive PFM images acquired while monitoring domain switching, the polarization switching mechanism can thus be visualized in the latent space, providing insight into domain evolution mechanisms and their correlation with the microstructure.

Nanostructured BaTiO3 polar thin films are increasingly critical to the function of future multilayer ceramic capacitors and related oxide‐based electronic devices. The effect of surface charges on BaTiO3 polarization behavior is therefore investigated by ultra‐high vacuum scanning probe microscopy (UHV‐SPM) for 3 distinct morphologies—epitaxial, polycrystalline, and nanocrystalline films. Regardless of the film morphology, Kelvin probe force microscopy reveals that BaTiO3 thin film surfaces exhibit positive charging after contact scanning by various noble AFM probes due to the work function difference between tip and specimen. According to piezoresponse force microscopy, these positive charges uniformly stabilize downward polarized domains. However, the hysteresis and concomitant surface charging behavior are strongly sensitive to microstructure and defects. In particular, the stability and switching behavior are influenced by bulk and interfacial defect distributions and hence correlated to film deposition methods and grain size. Such morphology dependent properties for BaTiO3 films are revealed only through UHV measurements where screening charges from the ambient can be minimized, demonstrating the importance of UHV‐SPM for understanding ferroelectric thin films and nanostructures.

No abstract