Polyamide thickness and roughness have been identified as critical properties that affect thin-film composite membrane performance for reverse osmosis. Conventional formation methodologies lack the ability to control these properties independently with high resolution or precision. An additive approach is presented that uses electrospraying to deposit monomers directly onto a substrate, where they react to form polyamide. The small droplet size coupled with low monomer concentrations result in polyamide films that are smoother and thinner than conventional polyamides, while the additive nature of the approach allows for control of thickness and roughness. Polyamide films are formed with a thickness that is controllable down to 4-nanometer increments and a roughness as low as 2 nanometers while still exhibiting good permselectivity relative to a commercial benchmarking membrane.

Perovskite solar cells (PSCs) based on thin films of organolead trihalide perovskites (OTPs) hold unprecedented promise for low-cost, high-efficiency photovoltaics (PVs) of the future. While PV performance parameters of PSCs, such as short circuit current, open circuit voltage, and maximum power, are always measured at the macroscopic scale, it is necessary to probe such photoresponses at the nanoscale to gain key insights into the fundamental PV mechanisms and their localized dependence on the OTP thin-film microstructure. Here we use photoconductive atomic force microscopy spectroscopy to map for the first time variations of PV performance at the nanoscale for planar PSCs based on hole-transport-layer free methylammonium lead triiodide (CH3NH3PbI3 or MAPbI3) thin films. These results reveal substantial variations in the photoresponse that correlate with thin-film microstructural features such as intragrain planar defects, grains, grain boundaries, and notably also grain-aggregates. The insights gained into such microstructure-localized PV mechanisms are essential for guiding microstructural tailoring of OTP films for improved PV performance in future PSCs.

Mixing materials with different crystal structures leads to new phases that otherwise would require negative pressure to be made.

SignificanceIntrinsic and extrinsic properties of ferroelectric materials are known to have strong dependencies on electrical and mechanical boundary conditions, resulting in finite size effects at length scales below several hundred nanometers. In ferroelectric thin films, equilibrium domain size is proportional to the square root of film thickness, which precludes the use of present tomographic microscopies to accurately resolve complex domain morphologies in submicrometer films. We report a subtractive experimental technique with volumetric resolution below 315 nm3, that allows for three-dimensional, tomographic imaging of materials properties using only an atomic force microscope. Multiferroic BiFeO3 was chosen as a model system for illustrating the capabilities of tomographic atomic force microscopy due to its technological relevance in low-power, electrically switchable magnetic logic.

Spintronic elements based on spin transfer torque have emerged with potential for on-chip memory, but they suffer from large energy dissipation due to the large current densities required. In contrast, an electric-fielddriven magneto-electric storage element can operate with capacitive displacement charge and potentially reach 1-10 J cm 2 switching operation. Here, magnetoelectric switching of a magnetoresistive element is shown, operating at or below 200 mV, with a pathway to get down to 100 mV. A combination of phase detuning is utilized via isovalent La substitution and thickness scaling in multiferroic BiFeO3 to scale the switching energy density to 10 J cm 2. This work provides a template to achieve attojoule-class nonvolatile memories.