In this Letter, we demonstrate a graphene mode-locked, all-fiber Ho-doped fiber laser generating 1.3 nJ energy pulses directly from the oscillator. The graphene used as a saturable absorber was obtained via chemical vapor deposition on copper substrate and immersed in a poly(methyl methacrylate) support. The laser generated ultrashort soliton pulses at 2080 nm with bandwidth up to 6.1 nm. The influence of the output coupling ratio and the SA modulation depth on the mode-locking performance was also investigated.
Diamond is proposed as an extraordinary material usable in interdisciplinary fields, especially in optics and photonics. In this contribution we focus on the doping of diamond with erbium as an optically active centre. In the theoretical part of the study based on DFT simulations we have developed two Er-doped diamond structural models with 0 to 4 carbon vacancies in the vicinity of the Er atom and performed geometry optimizations by the calculation of cohesive energies and defect formation energies. The theoretical results showed an excellent agreement between the calculated and experimental cohesive energies for the parent diamond. The highest values of cohesive energies and the lowest values of defect formation energies were obtained for models with erbium in the substitutional carbon position with 1 or 3 vacancies in the vicinity of the erbium atom. From the geometry optimization the structural model with 1 vacancy had an octahedral symmetry whereas the model with 3 vacancies had a coordination of 10 forming a trigonal structure with a hexagonal ring. In the experimental part, erbium doped diamond crystal samples were prepared by ion implantation of Er ions using ion implantation fluences ranging from 1 × 10 ions per cm to 5 × 10 ions per cm. The experimental results revealed a high degree of diamond structural damage after the ion implantation process reaching up to 69% of disordered atoms in the samples. The prepared Er-doped diamond samples annealed at the temperatures of 400, 600 and 800 °C in a vacuum revealed clear luminescence, where the 〈110〉 cut sample has approximately 6-7 times higher luminescence intensity than the 〈001〉 cut sample with the same ion implantation fluence. The reported results are the first demonstration of the Er luminescence in the single crystal diamond structure for the near-infrared spectral region.
(0001) c-plane, (11-20) a-plane, and m-plane (10-10) ZnO bulk crystals were implanted with 400-keV Gd+ ions using fluences of 5 × 1014, 1 × 1015, 2.5 × 1015, and 5 × 1015 cm−2. Structural changes during the implantation and subsequent annealing were characterized by Rutherford backscattering spectrometry in channeling mode (RBS-C); the angular dependence of the backscattered ions (angular scans) in c-, a-, and m-plane ZnO was realized to get insight into structural modification and dopant position in various crystallographic orientations. X-ray diffraction (XRD) with mapping in reciprocal space was also used for introduced defect identification. Defect-accumulation depth profiles exhibited differences for c-, a-, and m-plane ZnO, with the a-plane showing significantly lower accumulated disorder in the deeper layer in Zn-sublattice, accompanied by the preservation of ion channeling phenomena in a-plane ZnO. Enlargement of the main lattice parameter was evidenced, after the implantation, in all orientations. The highest was evidenced in a-plane ZnO. The local compressive deformation was seen with XRD analysis in polar (c-plane) ZnO, and the tensile deformation was observed in nonpolar ZnO (a-plane and m-plane orientations) being in agreement with RBS-C results. Raman spectroscopy showed distinct structural modification in various ZnO orientations simultaneously with identification of the disordered structure in O-sublattice. Nonpolar ZnO showed a significant increase in disorder in O-sublattice exhibited by E2(high) disappearance and enhancement of A1(LO) and E1(LO) phonons connected partially to oxygen vibrational modes. The lowering of the E2(low) phonon mode and shift to the lower wavenumbers was observed in c-plane ZnO connected to Zn-sublattice disordering. Such observations are in agreement with He ion channeling, showing channeling effect preservation with only slight Gd dopant position modification in a-plane ZnO and the more progressive diminishing of channels with subsequent Gd movement to random position with the growing ion fluence and after the annealing in c-plane and m-plane ZnO.
Efficient holmium fiber lasers have been studied as attractive laser sources operating around 2.1 μm. We report on holmium-doped silica fibers prepared by the modified chemical vapor deposition in combination with either a solution-doping method or a nanoparticle-doping method. A set of 15 fibers with various compositions was characterized and compared with respect to their fluorescence lifetime, laser slope efficiency and laser threshold. This set of fibers in wide concentration ranges allowed us to assess reliably the influence of material composition and the influence of doping method. The best-performance fibers exhibited slope efficiency 83.1%, laser threshold 155 mW and a record value of upper laser level lifetime of 1.35 ms. These results were achieved in fibers with holmium concentration lower than 800 molar ppm and Al/Ho molar ratio greater than 70. Significant differences between fibers prepared by solution doping and nanoparticle doping were not observed. The behavior of Al 2 O 3 nanoparticles during fiber preparation is discussed in details.
Abstract. Fibre lasers and inherently rare-earth-doped optical fibers nowadays pass through a new period of their progress aiming at high efficiency of systems and their high power. In this paper, we deal with the preparation of silica fibers doped with erbium and Al2O3 nanocrystals and the characterization of their optical properties. The fibers were prepared by the extended Modified Chemical Vapor Deposition (MCVD) method from starting chlorides or oxide nanopowders. Conventional as well as modified approaches led to a nanocrystalline mullite phase formation in the fiber cores in which erbium is dissolved. The proposed modified approach based on starting nanopowders led to improved geometry of preforms and fibers and consequently to the improvement of their background attenuation. Such nanocrystal -doped fibers can be used for ASE sources. Further improvement of fiber optical properties can be expected.
We demonstrated two methods of increasing the bandwidth of a broadband light source based on amplified spontaneous emission in thulium-doped fibres. Firstly, we have shown by means of a comprehensive numerical model that the full-width at half maximum of the thulium-doped fibre based broadband source can be more than doubled by using specially tailored spectral filter placed in front of the mirror in a double-pass configuration of the amplified spontaneous emission source. The broadening can be achieved with only a small expense of the output power. Secondly, we report results of the experimental thulium-doped fibre broadband source, including fibre characteristics and performance of the thulium-doped fibre in a ring laser setup. The spectrum broadening was achieved by balancing the backward amplified spontaneous emission with back-reflected forward emission.
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