Er implantation into various cuts of ZnO – experimental study and DFT modelling

Erbium ion implantation into LiNbO3, Al2O3, ZnO and diamond – measurement and modelling – an overview

“…ZnO was enhanced with erbium by the Er + ion implantation method in the maximum amounts of around 2.5-9.5 at% using ion implantation fluences of 1 Â 10 16 and 5 Â 10 16 cm À2 . 75 The Er maxima were at depths of approx. 30-40 nm (for 190 keV implantation energy).…”

“…Undoped ZnO. Theoretical DFT calculations of undoped and Er-doped ZnO were done in our previous study 75 and the results of the calculated cohesive energies of the undoped ZnO using GGA with various XC functionals are summarized in Table 2. The relative differences between the experimental and calculated cohesive energies varied from approx.…”

“…The research on Er-doped zinc oxide was reported by our group in several publications. 75,86,95 4.3.1. Er-Doped ZnO -theoretical results.…”

Cathodoluminescence of zinc and ytterbium oxide poly- and single crystals grown from melt under high pressure

“…However, it's still unclear whether large number of lantanide ions can be dispersed in ZnO crystalline lattice or the ions can only segregate into crystalline lanthanide oxide due to large charge and radius of trivalent lanthanide ion. Such thermodynamically non-equilibrium method as ion-beam implantation results in incorporation of lanthanide ions in ZnO crystalline lattice with its subsequent out diffusion and segregation upon heat treatment [14,15]. That fact also raises a question whether the luminescent lanthanide centers located in the ZnO or at interface between zinc and lanthanide oxides [7][8][9].…”

Cathodoluminescence of zinc oxide crystals grown from melt under high pressure in the presence of ytterbium oxide

“…However, it's still unclear whether large number of lantanide ions can be dispersed in ZnO crystalline lattice or the ions can only segregate into crystalline lanthanide oxide due to large charge and radius of trivalent lanthanide ion. Such thermodynamically non-equilibrium method as ion-beam implantation results in the incorporation of lanthanide ions in ZnO crystalline lattice with its subsequent out diffusion and segregation upon heat treatment [14,15]. That fact also raises a question whether the luminescent lanthanide centers located in ZnO matrix or at interface between zinc and lanthanide oxides [7][8][9].…”