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The solid-phase total synthesis of the proposed structure of cyclic depsipeptide coibamide A and its derivative O-desmethyl coibamide A is reported. In this study, we demonstrate the solid-phase synthetic strategy and final solutionphase O-methylation for highly N-methylated cyclic depsipeptides. On-resin macrocyclization, N,N-dimethylation and solution-phase O-methylation were the key steps of these syntheses. The mass of synthetic coibamide A is consistent

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KoreaRFID middleware collects and filters RFID streaming data to process applications' requests called continuous queries, because they are executed continuously during tag movement. Several approaches to building an index on queries rather than data records, called a query index, have been proposed to evaluate continuous queries over streaming data. EPCglobal proposed an Event Cycle Specification (ECSpec) model, which is a de facto standard query interface for RFID applications. Continuous queries based on ECSpec consist of a large number of segments that represent the query conditions. The problem when using any of the existing query indexes on these continuous queries is that it takes a long time to build the index, because it is necessary to insert a large number of segments into the index.To solve this problem, we propose a transform method that converts a group of segments into compressed data. We also propose an efficient query index scheme for the transformed space. Comparing with existing query indexes, the performance of proposed index outperforms the others on various datasets.RFID system, middleware, continuous query, stabbing query, query index

In order to develop high density NAND Flash device, the increased number of cell strings for 1 pag e buffer f orces to _ form a long bit-line with low sheet resistance, as well as low SitD parasitic capacitance between bit-lines. In this paper, we D secured a copper damascene process to form 38nm bit-lines(1) Photo Resist patterning with 76nm pitch using SADP (Self-Aligned Double Patterning) process. The methods to minimize the sheet resistance and to suppress the parasitic capacitance were explained on NAND Flash device with 38nm node technology.