Multiple data storage memory devices based on the controlled capacitive coupling of trapped electrons are fabricated using highly ordered arrays of metal nanoparticles. Results are presented from metal nanoparticle‐based memory devices with controlled nanoparticle charge trapping elements, which undergo gate‐voltage‐adjustable multilevel memory states. Experimental and theoretical analysis for multilevel data manipulations and visualization of memory states are done on the nanometer scale.

We investigated the charge decay characteristics of a silicon-oxide-nitride-oxide-silicon type nonvolatile memory at elevated temperatures. Based on the amphoteric trap model and the thermal emission model of the trapped charge, we propose an advanced charge decay model which includes the effect of the bottom oxide, and apply it to extraction of the trap density distribution in energy levels of the nitride layer. The samples prepared have nitride films deposited simultaneously and are classified into two groups according to the thickness of the bottom oxide. The trap density distributions extracted from two groups showed good consistency.

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A high performance embedded DRAM with deep trench capacitor and high performance SOI logic has been deployed in 45nm and 32nm technology nodes. Following a yield ramp of the sub-2ns latency 45nm technology, we present, for the first time, a 32nm eDRAM technology fully compatible with high performance logic with high-κ metal gate access transistor and high-κ node dielectric for the deep trench storage capacitor.We also describe the technology advancements required to scale the deep trench as well as the access transistor for optimal cell retention and performance. A clear scaling path is seen for the 22nm technology node.

PurposeGlucosamine (UDP-N-acetyl)-2-epimerase/N-acetylmannosamine kinase (GNE) myopathy is an autosomal recessive neuromuscular disorder characterized by early adult-onset weakness of the distal muscles of the lower limbs. The clinical spectrum of GNE myopathy varies, and it is not clear how the same GNE gene mutations can result in different phenotypes. Here, we present clinical, pathological and genetic characteristics of twenty-one Korean patients with GNE myopathy.Materials and MethodsTwenty-one GNE myopathy patients were included in this study, conducted from 2004 to 2011. Based on medical records, patients' gender, onset age, family history, clinical history, serum creatine kinase (CK) level, neurologic examination, findings of muscle biopsy, muscle imaging findings and electrophysiologic features were extensively reviewed. Mutation of the GNE gene (9p13.3) was confirmed by DNA direct sequencing analysis in all patients.ResultsThe mean onset age was 23.8±8.8 years (mean±SD). Patient serum CK levels were slightly to moderately elevated, ranging from 41 to 2610 IU. Among the patients, twelve patients were female and nine patients were male. Except for eight patients, all of the patients presented initially with only distal muscle weakness in the lower extremities. The most common mutation was V572L, followed by C13S.ConclusionThe clinical manifestations of our patients with GNE mutations varied. Among twenty-one patients, thirteen patients showed the typical GNE myopathy phenotype. There was no relationship between clinical features and site of mutation. Therefore, we suggest that neither homozygous nor compound heterozygous models are correlated with disease phenotype or disease severity.

We propose and implement a promising fabrication technology for geometrically well-defined single-electron transistors based on a silicon-on-insulator quantum wire and side-wall depletion gates. The 30-nm-wide silicon quantum wire is defined by a combination of conventional photolithography and process technology, called a side-wall patterning method, and depletion gates for two tunnel junctions are formed by the doped polycrystalline silicon sidewall. The good uniformity of the wire suppresses unexpected potential barriers. The fabricated device shows clear single-electron tunneling phenomena by an electrostatically defined single island at liquid nitrogen temperature and insensitivity of the Coulomb oscillation period to gate bias conditions.

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Acute disseminated encephalomyelitis (ADEM) is a monophasic autoimmune demyelinating disease of the central nervous system, which typically follows acute viral or bacterial infection or vaccination. We report a case of ADEM associated with hepatitis C virus (HCV) infection with positive serum and cerebrospinal fluid (CSF) anti-HCV antibody. After steroid treatment, neurologic symptoms were improved. Virus triggers autoimmunity or direct viral invasion plays a part in the genesis of ADEM. This is the first reported case of ADEM with anti-HCV antibody in the CSF.