Intrinsic fluctuations in Vertical NAND flash memories

Nowak, E.; Kim, Jae-Ho; Kwon, HyeYoung; Kim, Young-Gu; Sim, Jae Sung; Lim, Sanghyeok; Kim, Dae Sin; Lee, Keun-Ho; Park, Young-Kwan; Choi, Jung Kyu; Chung, Chilhee

doi:10.1109/vlsit.2012.6242441

Cited by 45 publications

(19 citation statements)

References 6 publications

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“…The model transconductance inside the grains, g m,c-Si , is calibrated using a mobility μ Si of 100 cm 2 V -1 s -1 , extracted from single-crystal Si finfet data. This is a similar value as in (5). For a cylindrical geometry with channel length L, inner radius r and oxide thickness t ox , we find:…”

Section: Resistive Network Modelsupporting

confidence: 82%

Characterizing grain size and defect energy distribution in vertical SONOS poly-Si channels by means of a resistive network model

Degraeve

Toledano-Luque

Arreghini

et al. 2013

2013 IEEE International Electron Devices Meeting

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The characterization of vertical poly-Si transistors, important for optimizing vertical SONOS memory configurations, is studied by means of a resistive network model. The statistical variation of the I SD -V G characteristics allows to extract the poly-Si grain size and from the sub-threshold regime information on the energy distribution of the poly-Si defects is extracted. This model indicates the separated impact of interface states and poly-Si states on current and V th . Introduction and purpose

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Section: Resistive Network Modelsupporting

confidence: 82%

Characterizing grain size and defect energy distribution in vertical SONOS poly-Si channels by means of a resistive network model

Degraeve

Toledano-Luque

Arreghini

et al. 2013

2013 IEEE International Electron Devices Meeting

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“…Statistical data for RTN are shown in [320][321][322] and are presented in Figure 38 (left) for different temperatures. Note that the usual exponential distribution of amplitude appears, whose slope is greatly reduced with respect to planar technologies [299,323,324].…”

Section: Random Telegraph Noisementioning

confidence: 99%

Reliability of NAND Flash Memories: Planar Cells and Emerging Issues in 3D Devices

2017

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Abstract:We review the state-of-the-art in the understanding of planar NAND Flash memory reliability and discuss how the recent move to three-dimensional (3D) devices has affected this field. Particular emphasis is placed on mechanisms developing along the lifetime of the memory array, as opposed to time-zero or technological issues, and the viewpoint is focused on the understanding of the root causes. The impressive amount of published work demonstrates that Flash reliability is a complex yet well-understood field, where nonetheless tighter and tighter constraints are set by device scaling. Three-dimensional NAND have offset the traditional scaling scenario, leading to an improvement in performance and reliability while raising new issues to be dealt with, determined by the newer and more complex cell and array architectures as well as operation modes. A thorough understanding of the complex phenomena involved in the operation and reliability of NAND cells remains vital for the development of future technology nodes.

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“…Random telegraph noise (RTN) was frequently discussed for both 2D and 3D NAND Flash devices (Nowak et al 2012;Jeong et al 2012). In 3D NAND device, it was reported that RTN can be larger than bulk 2D NAND due to the increase trap density in poly-silicon channel, as shown in Fig.…”

Section: General Issues and Device Considerations In 3d Nand Flashmentioning

confidence: 99%

3D NAND Flash Architectures

Lue

2015

Charge-Trapping Non-Volatile Memories

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Intrinsic fluctuations in Vertical NAND flash memories

Cited by 45 publications

References 6 publications

Characterizing grain size and defect energy distribution in vertical SONOS poly-Si channels by means of a resistive network model

Characterizing grain size and defect energy distribution in vertical SONOS poly-Si channels by means of a resistive network model

Reliability of NAND Flash Memories: Planar Cells and Emerging Issues in 3D Devices

3D NAND Flash Architectures

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