The effects of growth temperature on Er-related photoluminescence (PL) have been investigated in Er-doped InP (InP:Er) and GaAs (GaAs:Er) grown by organometallic vapor phase epitaxy (OMVPE) using tertiarybutylphosphine (TBP) and tertiarybutylarsine (TBAs). In InP:Er, the PL spectra exhibit strong dependence on the growth temperature, and the intensity increases drastically in specimens prepared at temperatures lower than 550° C. Similar dependence of PL intensity on the growth temperature is observed in GaAs:Er. The activation energy obtained is about 3 eV in both materials. The activation energy is discussed based on atomic configurations of Er-related luminescence centers.
For understanding the luminescence of Er atoms in III±V semiconductors, OMVPE-grown InP doped with Er has been investigated by¯uorescence EXAFS (extended X-ray absorption ®ne structure) in order to study the local structure around Er atoms. The local structures around the Er atoms doped in InP, with doping as dilute as 3  10 12 Er atoms in a 1.5 mm  1.0 mm spot, were successfully measured by¯uorescence EXAFS. The EXAFS analysis revealed that the Er atoms doped in InP above 853 K (which showed low luminescence) formed the rock-salt-structure ErP, while the Er atoms doped in InP below 823 K (which showed high luminescence) substituted on the In site of InP. The dependence of the local structure on growth temperature was observed for the samples doped with 3  10 12 atoms and 1.2  10 13 atoms of Er.
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