Atom configuration study of δ-doped Er in InP by fluorescence EXAFS

Local Structure Study of Lanthanide Elements by X‐Ray Absorption Near Edge Structure Spectroscopy

“…Extended X-ray absorption fine structure (EXAFS) spectroscopy, the other part of X-ray absorption spectroscopy (XAS), is a more widely used technique to analyse local structure (e. g. atomic distance, coordination number) around an X-ray absorbing atom based on the quantitative analysis procedure of EXAFS oscillation proposed by Sayers et al in 1971. [10] EXAFS spectroscopy has been applied not only to 3d, 4d, and 5d transition metal elements, but also to lanthanide (Ln) elements in various materials such as semiconductors, [11] separation, [12] and optical devices. [13] In the EXAFS study of Ln elements, the Ln L 3 -edge is usually employed because even La K-edge measurement, which is the lowest absorption edge energy among Ln elements, needs X-rays of energy higher than 38 keV.…”

Local Structure and L1- and L3-Edge X-ray Absorption Near Edge Structures of Middle Lanthanoid Elements (Eu, Gd, Tb, and Dy) in Their Complex Oxides

“…8 However, XANES studies on the local configuration of the Ln elements are more scarce than those on 3d and 4d elements probably because the Ln L-edge XANES spectra of various Ln-containing compounds are featureless because of the large natural widths of the core level. 9 In the meanwhile, extended X-ray absorption fine structure (EXAFS) spectroscopy, the other part of X-ray absorption spectroscopy (XAS), is more widely used to analyze the local structure around an X-ray absorbing atom, based on the quantitative analysis of the EXAFS oscillations proposed by Sayers et al 10 EXAFS spectroscopy has been applied not only to 3d, 4d, and 5d transition metals but also to Ln elements in various materials such as catalysts, 11,12 semiconductors, 13,14 and optical devices. 15,16 For the EXAFS study of the lanthanoid elements, Ln L 3 -edge is usually employed because even La Kedge, which is the lowest absorption edge among the Ln Kedges, needs sufficient X-ray flux, higher than 38 keV.…”

“…In the meanwhile, extended X-ray absorption fine structure (EXAFS) spectroscopy, the other part of X-ray absorption spectroscopy (XAS), is more widely used to analyze the local structure around an X-ray absorbing atom, based on the quantitative analysis of the EXAFS oscillations proposed by Sayers et al EXAFS spectroscopy has been applied not only to 3d, 4d, and 5d transition metals but also to Ln elements in various materials such as catalysts, , semiconductors, , and optical devices. , For the EXAFS study of the lanthanoid elements, Ln L 3 -edge is usually employed because even La K-edge, which is the lowest absorption edge among the Ln K-edges, needs sufficient X-ray flux, higher than 38 keV. It is only available at the world’s largest synchrotron radiation facilities such as SPring-8 (Super Photon ring-8GeV, Japan), APS (Advanced Photon Source, USA), and ESRF (European Synchrotron Radiation Facility, France).…”

A theoretical approach to La L1-edge XANES spectra of La complex oxides and their local configuration

“…X-ray absorption spectroscopy (XAS) is an important tool in science and technology and can be characterized by element specificity and penetration power. These features have realized a large number of applications for the element specific analysis of various materials, such as dopants or modifiers in dielectric materials, 1,2 semi-conductors, 3,4 glasses, [5][6][7][8] and catalysts. 9 An X-ray absorption spectrum is usually divided into two regions: the X-ray absorption near edge structure (XANES) which contains electronic and geometric information such as an oxidation number and centrosymmetry of the X-ray absorbing atom and the extended X-ray absorption fine structure (EXAFS) which contains important information about the local structure, such as the atomic distance between an X-ray absorbing atom and adjacent atoms and the coordination number of the neighboring atoms of the X-ray absorbing atom.…”