Effects of Growth Temperature on Er-Related Photoluminescence in Er-Doped InP and GaAs Grown by Organometallic Vapor Phase Epitaxy with Tertiarybutylphosphine and Tertiarybutylarsine

Abstract

The effects of growth temperature on Er-related photoluminescence (PL) have been investigated in Er-doped InP (InP:Er) and GaAs (GaAs:Er) grown by organometallic vapor phase epitaxy (OMVPE) using tertiarybutylphosphine (TBP) and tertiarybutylarsine (TBAs). In InP:Er, the PL spectra exhibit strong dependence on the growth temperature, and the intensity increases drastically in specimens prepared at temperatures lower than 550° C. Similar dependence of PL intensity on the growth temperature is observed in GaAs:Er. The activation energy obtained is about 3 eV in both materials. The activation energy is discussed based on atomic configurations of Er-related luminescence centers.

Local structure study of dilute Er in III–V semiconductors by fluorescence EXAFS

“…In this work, optical properties of Er doped in semiconductors were found to depend strongly on growth conditions (Fujiwara et al, 1997). The difference in the luminescence intensity is considered to be related to local structures around the Er atoms which must depend on the growth temperature.…”

Growth temperature dependence of the surface segregation of Er atoms in GaAs during molecular beam epitaxy

“…3) Thus, these luminescence properties are promising for fabricating light-emitting devices for optical fiber communication. 4) Er-doped GaAs is often obtained by epitaxial growth, such as molecular beam epitaxy (MBE), 1,5,6) metalorganic vapor phase epitaxy, 3,7,8) and liquid phase epitaxy, 9) along with ion implantation. 10,11) The surface segregation of Er atoms during epitaxial growth is a significant obstacle to obtaining elaborate semiconductor structures.…”

Energy structure of Er-2O center in GaAs:Er,O studied by high magnetic field photoluminescence measurement

“…They have a large impact on optical communication systems operating near 1:5 mm, which is in the minimum region absorption of silica-based optical fibers. PL measurements of InP:Er and GaAs:Er [1] and Si:Er [2,3] have been studied. Fujiwara et al and Takahei et al have discovered the sharp intensity on Er in GaAs with O 2 co-doping [5,6].…”