Abstract:We have quantitatively studied the temperature dependence of the surface segregation of Er atoms in GaAs during molecular beam epitaxy using secondary ion mass spectroscopy. It was found that a significant number of Er atoms segregate to the growing surface at temperatures of 400 °C and above and that the segregation decay length is approximately 0.5 µm at 500 °C, indicating that the incorporation ratio of Er atoms into GaAs is less than 10 %3 . In contrast to the growth at higher temperatures, GaAs overlayer … Show more
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