We review the salient aspects of nanoimprint lithography and consider the challenges it faces in becoming a standard fabrication technique, such as costs and throughput. We discuss material issues such as visco-elasticity and functionality of the printed material. By way of an illustration, we present printing results of 50 nm features over a 2×2 cm2 area which are reproducible with high fidelity. Data of printing 15 nm features in PMMA using a Cr stamp was obtained.

The direct patterning of functional semiconducting polymers (see Figure) has been achieved with a nanoimprint lithography technique. The room‐temperature process described is time‐saving as repeated temperature cycling is not required. In addition, due to the direct patterning approach the need for further processing steps (plasma treatment) to pattern the underlying semiconducting material is eliminated.

Switching speed is crucial for many applications in organic electronics. The possibility to achieve higher frequencies will enable new fields of applications. The authors demonstrate high-frequency organic thin film transistors based on poly(3-hexylthiophene). Transistors with submicron channel lengths show unity-gain bandwidth of 2MHz in air at low supply voltages of 10V. For channel lengths L below 500nm deviations from ideal L scaling law are observed experimentally, which are attributed to contact effects. They present a model beyond the ideal scaling law to predict the maximum operational frequency based on transistor parameters, geometry, and contact resistance.

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