We have measured the static magnetic susceptibility and the resistivity of Zn (0рzр0.25) and Sr (0рx р0.03) doped La 2 CuO 4 . Our data clearly show that Zn impurities lead to an increase of the Néel temperature T N in weakly hole doped compounds. This increase of T N correlates with an increase of the resistivity. The analysis of our data strongly suggests that the hole mobility is the most important source for the strong suppression of antiferromagnetic order in La 2Ϫx Sr x CuO 4 . ͓S0163-1829͑99͒50102-1͔
RAPID COMMUNICATIONS
R726PRB 59 M. HÜ CKER et al.
RAPID COMMUNICATIONSPRB 59 R727 MOBILITY OF HOLES AND SUPPRESSION OF . . .
RAPID COMMUNICATIONS
R728PRB 59 M. HÜ CKER et al.
Highly a-axis-textured CrO 2 films have been deposited on Al 2 O 3 (0001) and on isostructural TiO 2 (100) substrates by a chemical vapour deposition technique. For Al 2 O 3 substrates a columnar growth of CrO 2 (010) on an initial Cr 2 O 3 (0001) layer has been found in transmission electron microscopy as well as in x-ray diffraction investigations. The sixfold in-plane symmetry of a (0001)-oriented Cr 2 O 3 initial layer leads to three equivalent in-plane orientations of the CrO 2 unit cell as confirmed by electron diffraction and scanning electron microscopy. The growth can be understood by a simple model of the in-plane symmetries of the Al 2 O 3 (0001), Cr 2 O 3 (0001), and CrO 2 (010) lattices. The growth on TiO 2 (100) substrates leads to (100)-oriented CrO 2 films of higher crystalline quality than the ones grown on Al 2 O 3 (0001). Transmission electron microscope images show growth of CrO 2 (100) directly on the TiO 2 (100) substrates and no significant Cr 2 O 3 inclusions within the CrO 2 (100) layer. All contributions to the magnetoresistance (MR) due to anisotropic MR, Lorentz MR, spin disorder, and intergrain tunnelling MR have been determined and partly correlated with the crystalline properties of the samples investigated. For films of both types the intrinsic linear contribution to the high-field MR does not depend on the crystalline quality of the films and supports the suggested intrinsic doubleexchange mechanism for CrO 2 .
The Cu spin magnetism in La2−x−yEuySrxCuO4 (x ≤ 0.17; y ≤ 0.2) has been studied by means of magnetization measurements in fields up to 14 Tesla. Our results clearly show that in the antiferromagnetic phase Dzyaloshinsky-Moriya (DM) superexchange causes Cu spin canting not only in the LTO phase but also in the structural low-temperature phases LTLO and LTT. In La1.8Eu0.2CuO4 the canted DM-moment is about 50% larger than in pure La2CuO4 which we attribute to the larger octahedral tilt angle in the Eu-doped compound. We also find clear evidence that the size of the canted DM-moment does not change significantly at the structural transition at TLT from LTO to LTLO and LTT. The most important change induced by the transition is a significant reduction of the magnetic coupling between the CuO2 planes. As a consequence, the spin-flip transition of the canted Cu spins which is observed in the LTO phase for magnetic field perpendicular to the CuO2 planes disappears in the LTT phase. The shape of the magnetization curves changes from the well known spin-flip type to a weak-ferromagnet type. However, no spontaneous weak ferromagnetism is observed even at very low temperatures, which seems to indicate that the interlayer decoupling in our samples is not perfect. Nonetheless, a small fraction ( 15%) of the DM-moments can be remanently magnetized throughout the entire antiferromagnetically ordered LTT/LTLO phase, i.e. for T < TLT and x < 0.02. It appears that the remanent DM-moment is perpendicular to the CuO2 planes. For magnetic field parallel to the CuO2 planes we find that the critical field of the spin-flop transition decreases in the LTLO phase, which might indicate a competition between different inplane anisotropies. To study the Cu spin magnetism in La2−x−yEuySrxCuO4, a careful analysis of the Van Vleck paramagnetism of the Eu 3+ ions was performed.
The growth of (010)-oriented CrO2 thin films on Al2O3(0001) substrates leads to a higher grain boundary density than the growth of (100)-oriented CrO2 thin films on isostructural TiO2(100) substrates. For both types of films an intrinsic linear contribution to the high field magnetoresistance (MR) due to spin disorder has been determined at T=300 K. This contribution does not depend on the crystalline quality of the films and supports the suggested intrinsic double exchange mechanism for CrO2. At low temperature (T=10 K) intergrain tunneling MR and Lorentz MR appear, which strongly depend on the crystalline properties of the CrO2 films.
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