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We report on the thermal design and the characterization of InP-based 1.55 µm wavelength large diameter (∼100 µm) optically pumped vertical external cavity surface emitting lasers (OP-VECSELs). The device is thermally optimized for high power (>70 mW) room-temperature (RT) continuous-wave (CW) single-mode operation. Efficient bottom heat dissipation in the 1/2-VCSEL chip is obtained thanks to the use of a hybrid metalmetamorphic GaAs/AlAs mirror integrated to the InP-based active region, and to subsequent soldering on a SiC substrate. A single-mode output power of 77mW is obtained under CW-RT laser operation, limited by the pump power. Moreover thermal simulations and characterizations of the 1/2-VCSEL chip show that even higher power could be obtained at higher pumping levels, using a CVD diamond substrate.

We have analyzed pulse width and timing jitter in passively mode-locked two-section InAs quantum-dot lasers emitting at 1310 nm and have identified two distinct, extensive mode-locked regions with robust short pulses and low timing jitter. A record combination of 2 ps pulses and 25 fs/cycle timing jitter (500 fs, 1-100 MHz), with 1 mW average output power per facet, is demonstrated.

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We report for the first time on the systematic measurement of timing jitter of 40-GHz self-pulsating Fabry-Perot laser based on InAs/InP quantum dashes emitting at 1.55 microm. Two different methods, one based on optical cross-correlation and one on electrical spectrum sideband integration are used and show a good agreement, yielding a jitter of 0.86 ps in the 1 MHz---20 MHz frequency range with a potential of 280 fs for optimized driving conditions. Amplitude noise and high-frequency timing jitter contributions are also discussed.

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We report on subpicosecond pulse generation using passively mode locked lasers (MLL) based on a low optical confinement single InGaAsP/InP quantum well active layer grown in one epitaxial step. Systematic investigation of the performances of two-section MLLs emitting at 1.54 microm evidenced pulse width of 860 fs at 21.31 GHz repetition rate, peak power of approximately 500 mW and a time-bandwith product of 0.57. A 30 kHz linewidth of the photodetected radio-frequency electrical spectrum is further demonstrated at 21 GHz which is, to our knowledge, the lowest value ever reported for a quantum well device.