2008
DOI: 10.1007/s11082-007-9174-5
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Thermal optimization of 1.55 μm OP-VECSEL with hybrid metal–metamorphic mirror for single-mode high power operation

Abstract: We report on the thermal design and the characterization of InP-based 1.55 µm wavelength large diameter (∼100 µm) optically pumped vertical external cavity surface emitting lasers (OP-VECSELs). The device is thermally optimized for high power (>70 mW) room-temperature (RT) continuous-wave (CW) single-mode operation. Efficient bottom heat dissipation in the 1/2-VCSEL chip is obtained thanks to the use of a hybrid metalmetamorphic GaAs/AlAs mirror integrated to the InP-based active region, and to subsequent sold… Show more

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Cited by 41 publications
(22 citation statements)
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“…Figure 2(a) shows the architecture of the cavity of the DF-VECSEL operating at 1.55 µm. It is based on a 1/2-VCSEL structure including an InP/InGaAlAs multiquantum-well active region, and a GaAs/AlAs Bragg mirror [20]. The substrate used is polycrystalline chemical vapor deposition (CVD) diamond [21].…”
Section: A Noise Correlation Measurement Setupmentioning
confidence: 99%
“…Figure 2(a) shows the architecture of the cavity of the DF-VECSEL operating at 1.55 µm. It is based on a 1/2-VCSEL structure including an InP/InGaAlAs multiquantum-well active region, and a GaAs/AlAs Bragg mirror [20]. The substrate used is polycrystalline chemical vapor deposition (CVD) diamond [21].…”
Section: A Noise Correlation Measurement Setupmentioning
confidence: 99%
“…The drawback of this material system is the lack of high index contrast for lattice-matched InP-based DBR layers that can be monolithically integrated with the gain structure. Consequently, the recent development of InP-based VECSELs has utilized metamorphic growth with hybrid mirror technology [116], or wafer bonding techniques which enable the integration of InP-based gain structures with GaAs-based DBRs [117,118]. These approaches will be described in more detail in the next section.…”
Section: Gain Mirror Technologymentioning
confidence: 99%
“…The benefits of these materials include high adhesion, high mechanical stability and limited diffusion between the layers [133]. But the use of oxide di electrics also has certain clear drawbacks; namely, they exhibit poor thermal conductivity [116,134] and poor adhesion to Au [135]. One possible way to circumvent these drawbacks could be to use fluoride dielectrics, due to their higher thermal conductivities [136] and better adhesion to Au [137].…”
Section: Use Of Hybrid Mirrors With Reduced Thickness Ofmentioning
confidence: 99%
“…Several alternatives have been explored for improved mirrors in this case. Metamorphic, or non-latticematched, semiconductor mirror materials have been used, for example, GaAs/AlAs mirrors on InP substrate, as well as hybrid metal-enhanced metamorphic mirrors [122,123]. Dielectric mirrors [124] have also been used in VECSELs with optical pumping since no current injection is required in this case.…”
Section: On-chip Multilayer Laser Bragg Mirrormentioning
confidence: 99%