3 W at genuine red wavelength of 650 nm has been achieved from a semiconductor disk laser by frequency doubling. An InP based active medium was fused with a GaAs/AlGaAs distributed Bragg reflector resulting in an integrated monolithic gain mirror. 6.6 W of output power at the fundamental wavelength of 1.3 µm represents the best achievement reported to date for this type of lasers.
A mode-locked Raman fiber laser pumped by 1.3 µm semiconductor disk laser is demonstrated. Direct Watt-level core-pumping of the single-mode fiber Raman lasers and amplifiers with low-noise disk lasers is demonstrated to represent a highly practical solution as compared with conventional scheme using pumping by Raman wavelength convertors. Raman laser employing passive mode-locking by nonlinear polarization evolution in normal dispersion regime produces stable pedestal-free 1.97 ps pulses at 1.38 µm. Using semiconductor disk lasers capable of producing high power with diffraction-limited beam allows Raman gain to be obtained at virtually any wavelength of interest owing to spectral versatility of semiconductor gain materials and wafer-fusing technology.
We demonstrate an optically pumped semiconductor disk laser operating at 1580 nm with 4.6 W of output power, which represents the highest output power reported from this type of laser. 1 W of output power at 785 nm with nearly diffraction-limited beam has been achieved from this laser through intracavity frequency doubling, which offers an attractive alternative to Ti:sapphire lasers and laser diodes in a number of applications, e.g., in spectroscopy, atomic cooling and biophotonics.
We present optically pumped semiconductor disk lasers with a thin dielectric layer placed between the semiconductor distributed Bragg reflector and the metallization interface. The approach is shown to enhance the reflectivity of the semiconductor mirror while introducing a negligible penalty to the thermal resistance of the device. The design has potential for improving the performance of semiconductor disk lasers by avoiding highly pump-absorbing metal layers and allowing thinner mirror structures. The advantages are expected to be especially prominent for material systems that employ thick thermally insulating semiconductor mirrors.
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