1 W at 785 nm from a frequency-doubled wafer-fused semiconductor disk laser

Rantamäki, Antti; Rautiainen, J.; Lyytikäinen, Jari; Sirbu, Alexei; Mereuta, A.; Kapon, E.; Okhotnikov, Oleg G.

doi:10.1364/oe.20.009046

Cited by 27 publications

(13 citation statements)

References 40 publications

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“…The output power at 750 nm combined from the two outputs reaches 1.5 W at an incident pump power of 18 W, which corresponds to an optical-to-optical efficiency of 8.3%. The efficiency is approximately four times higher than that obtained in the previous studies with SDLs in the 700-800 nm wavelength range [21,27], partly owing to the large nonlinear coefficient of the BiBO crystal. Power at the fundamental wavelength was measured behind the high reflection (HR) mirror M2.…”

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“…These results can be transferred into visible and near-infrared wavelengths via frequency doubling. In particular, output powers of 3 W at 650 nm and 1 W at 785 nm have been obtained by doubling the emission from 1.30 μm and 1.57 μm wafer-fused SDLs in intracavity beta barium borate (BBO) and lithium triborate (LBO) crystals, respectively [26,27]. In this Letter, we report on an SDL frequency doubled to 750 nm in bismuth borate (BiBO) crystal with 1.5 W output power, a broad tuning range extending from 720 to 764 nm, and total optical-to-optical efficiency of 8.3%.…”

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750 nm 15 W frequency-doubled semiconductor disk laser with a 44 nm tuning range

et al. 2015

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We demonstrate 1.5 W of output power at the wavelength of 750 nm by intracavity frequency doubling a wafer-fused semiconductor disk laser diode-pumped at 980 nm. An optical-to-optical efficiency of 8.3% was achieved using a bismuth borate crystal. The wavelength of the doubled emission could be tuned from 720 to 764 nm with an intracavity birefringent plate. The beam quality parameter M² of the laser output was measured to be below 1.5 at all pump powers. The laser is a promising tool for biomedical applications that can take advantage of the large penetration depth of light in tissue in the 700-800 nm spectral range.

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750 nm 15 W frequency-doubled semiconductor disk laser with a 44 nm tuning range

et al. 2015

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“…This matter has been settled using wafer fusion that allows the integration of InP-based active regions with high quality GaAs-based DBRs. Consequently, multiwatt output powers in the wavelength range 1.3-1.6 μm have been demonstrated [2,3]. In the present work, we demonstrate a wafer-fused single-frequency SDL emitting at 1.56 μm with watt-level output power.…”

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1 Watt from 1.56 μm single frequency semiconductor disk laser

Rantamäki

Rautiainen

Sirbu

et al. 2013

2013 Conference on Lasers &Amp; Electro-Optics Europe &Amp; International Quantum Electronics Conference CLEO EUROPE/IQEC

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The potential for power scaling and wavelength scalability of semiconductor disk lasers (SDLs) makes them attractive for high-power single-frequency operation with numerous applications. In particular, single-frequency operation at 1.55 μm has been demonstrated with a monolithically grown InP-based SDL with 170 mW of output power at room temperature [1].The performance of monolithically grown InP-based SDLs, however, suffers from the low quality of distributed Bragg reflectors (DBRs), because the available compounds lattice-matched to InP offer low of refractive index contrast and poor thermal conductivity. This matter has been settled using wafer fusion that allows the integration of InP-based active regions with high quality GaAs-based DBRs. Consequently, multiwatt output powers in the wavelength range 1.3-1.6 μm have been demonstrated [2,3]. In the present work, we demonstrate a wafer-fused single-frequency SDL emitting at 1.56 μm with watt-level output power. The result represents the highest output power obtained from a single-frequency SDL at this wavelength range.The thermal management of the gain chip was achieved by capillary bonding it onto a 300 μm thick intracavity diamond heat spreader. The optical pumping was performed with a 980 nm fiber-coupled diode laser that was focused onto a spot with a diameter of 300 μm at the gain element. The arm lengths of the laser Vcavity were 12 cm and 20 cm. Two fused silica etalons with thicknesses of 500 μm and 750 μm were inserted into the cavity to facilitate the single frequency operation.The output power for a single-frequency regime as a function of pump power is shown in Fig. 1(a). The single-frequency operation was validated using a scanning Fabry-Perot interferometer (FPI) with a free spectral range of 1.5 GHz. The observed linewidth of 18 MHz was instrument resolution limited. The spectral linewidth was further studied using a delayed self-heterodyne interferometer (DSHI) with a 25 μs delay and 100 MHz acousto-optic modulator [4]. The DSHI output shown in Fig. 1(b) reveals 40 kHz oscillations in the wings of the signal. These oscillations correspond to the inverse of the DSHI delay time and indicate that the coherence length of the laser is longer than the 5 km DSHI fiber delay line [5]. Fig. 1(b) also shows a Lorentzian fit to the experimental signal, neglecting the central peak [5]. Fig. 1 (a): The output power for single-frequency operation as a function of pump power. The output beam and the spectrum of the laser are shown in the inset. (b): The DSHI signal at 600 mW of output power. Lorentzian fit is shown in red.

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“…It also has a resemblance to hydrophobic bonding, because the surface oxides are removed prior to bonding and the bonding is carried out in oxygen-reduced atmospheres, such as hydrogen or nitrogen. Such wafer-fused VECSELs have exhibited output powers of 33 W at 1.28 µm [184], 5 W at 1.48 µm [185] and 4.7 W at 1.58µm [186]. figure 8.…”

Section: Wafer Bonding Of Gaas-based Dbrs With Vecselmentioning

confidence: 99%