2011
DOI: 10.1109/jstqe.2011.2116772
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InAs/InP Quantum-Dot Passively Mode-Locked Lasers for 1.55-μ m Applications

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Cited by 100 publications
(64 citation statements)
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“…From now on, we call the laser with longer absorber "D 1 " and the device with shorter absorber as "D 2 ". Both devices operated in saturable-absorber dominated modelocked (SAML) regimes [18], [19] when the absorbers were biased well below the transparency point (≈0.9 V). The bias operational parameters of the device for SAML operation were typically around 100-200 mA for gain current and approximate absorber voltage of -0.6 V to 0.3 V for D 1 and -1.1 V to 0.3 V for D 2 .…”
Section: Experimental Arrangement For Injection Locking and Devicmentioning
confidence: 99%
“…From now on, we call the laser with longer absorber "D 1 " and the device with shorter absorber as "D 2 ". Both devices operated in saturable-absorber dominated modelocked (SAML) regimes [18], [19] when the absorbers were biased well below the transparency point (≈0.9 V). The bias operational parameters of the device for SAML operation were typically around 100-200 mA for gain current and approximate absorber voltage of -0.6 V to 0.3 V for D 1 and -1.1 V to 0.3 V for D 2 .…”
Section: Experimental Arrangement For Injection Locking and Devicmentioning
confidence: 99%
“…A QD-based passively mode-locked laser with a 12-nm 3-dB optical bandwidth was presented in [23]. A frequency comb of more than 16 nm was demonstrated from a Q-dash laser in [24].…”
Section: Introductionmentioning
confidence: 99%
“…Broad gain, high degree of tunability and, in some cases, a high surface density 1,3-8 make their optical properties favorable over other quasi-zero dimensional structures for many telecommunication applications. InP QDash structures are now commonly used in high performance lasers and optical amplifiers operating at 1.55 µm 1,3,9 . They also show some promises for possible future single-photon technologies.…”
Section: Introductionmentioning
confidence: 99%