Double quantum dot in a quantum dash: Optical properties

Kaczmarkiewicz, Piotr; Machnikowski, Paweł; Kuhn, Thomas

doi:10.1063/1.4829700

Cited by 3 publications

(2 citation statements)

References 44 publications

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“…The PAT controlled by plunger-gate has been investigated to study electrical 7 and optical 8,9 properties of a double-quantum dot (DQD) system , in which the PAT can be used as a spectroscopic tool in two different regimes defined by a zero 10 , and non-zero 11 bias voltage. At zero-bias voltage, the DQD works as a proper electron pumping device in which the photon absorption process leads to electron tunneling producing a dc current.…”

Section: Introductionmentioning

confidence: 99%

Delocalization of electrons by cavity photons in transport through a quantum dot molecule

Abdullah

Tang

Manolescu

et al. 2014

Physica E: Low-dimensional Systems and Nanostructures

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We present new results on cavity-photon-assisted electron transport through two lateral quantum dots embedded in a finite quantum wire. The double quantum dot system is weakly connected to two leads and strongly coupled to a single quantized photon cavity mode with initially two linearly polarized photons in the cavity. Including the full electron-photon interaction, the transient current controlled by a plunger-gate in the central system is studied by using quantum master equation. Without a photon cavity, two resonant current peaks are observed in the range selected for the plunger gate voltage: The ground state peak, and the peak corresponding to the first-excited state. The current in the ground state is higher than in the first-excited state due to their different symmetry. In a photon cavity with the photon field polarized along or perpendicular to the transport direction, two extra side peaks are found, namely, photon-replica of the ground state and photonreplica of the first-excited state. The side-peaks are caused by photon-assisted electron transport, with multiphoton absorption processes for up to three photons during an electron tunneling process. The inter-dot tunneling in the ground state can be controlled by the photon cavity in the case of the photon field polarized along the transport direction. The electron charge is delocalized from the dots by the photon cavity. Furthermore, the current in the photon-induced side-peaks can be strongly enhanced by increasing the electron-photon coupling strength for the case of photons polarized along the transport direction.

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Section: Introductionmentioning

confidence: 99%

Delocalization of electrons by cavity photons in transport through a quantum dot molecule

Abdullah

Tang

Manolescu

et al. 2014

Physica E: Low-dimensional Systems and Nanostructures

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show abstract

“…Of these geometries, spherical and cylindrical QD have the simplest mathematical description, since in such cases the symmetry of the systems often allows the separation of variables in the corresponding Schrödinger equations [15,16,17]. However, for QD with a more complex geometry, even in the case of single-particle states, one has to use either approximate analytical or numerical methods [18,19,20].…”

Section: Introductionmentioning

confidence: 99%

Realization of the Kohn’s Theorem in Ge/Si Quantum Dots with Hole Gas: Theory and Experiment

et al. 2019

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This article discusses specific quantum transitions in a few-particle hole gas, localized in a strongly oblate lens-shaped quantum dot. Based on the adiabatic method, the possibility of realizing the generalized Kohn theorem in such a system is shown. The criteria for the implementation of this theorem in a lens-shaped quantum dot, fulfilled in the experiment, is presented. An analytical expression is obtained for the frequencies of resonant absorption of far-infrared radiation by a gas of heavy holes, which depends on the geometric parameters of the quantum dot. The results of experiments on far-infrared absorption in the arrays of p-doped Ge/Si quantum dots grown by molecular beam epitaxy (MBE) with gradually increasing average number of holes in dot are presented. Experimental results show that the Coulomb interaction between the holes does not affect the resonant frequency of the transitions. A good agreement between the theoretical and experimental results is shown.

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The effect of structural parameters on the in-plane coupling between quantum dashes of a dense ensemble in the InAs-InP material system

Ryczko

Sęk

Misiewicz

2014

Journal of Applied Physics

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In this work, we investigate the importance of lateral electronic coupling in a dense ensemble of anisotropic epitaxial nanostructures called quantum dashes. The respective confined state energy levels and the related tunneling times between two neighboring nanostructures are calculated using a simplified approach with parabolic effective masses in a single band k·p approximation, and assuming infinite size of the quantum dashes in the elongation direction. There has been studied the influence of the cross-sectional dimensions of the dashes, their lateral separation and the barrier material. Eventually, the impact of the inhomogeneity within the ensemble of nanostructures has been discussed. For the presented calculations the InAs dashes on InP substrate have been chosen as a model system because of the high areal density and strong in-plane anisotropy obtained typically in the self-assembled growth by molecular beam epitaxy.

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Double quantum dot in a quantum dash: Optical properties

Cited by 3 publications

References 44 publications

Delocalization of electrons by cavity photons in transport through a quantum dot molecule

Delocalization of electrons by cavity photons in transport through a quantum dot molecule

Realization of the Kohn’s Theorem in Ge/Si Quantum Dots with Hole Gas: Theory and Experiment

The effect of structural parameters on the in-plane coupling between quantum dashes of a dense ensemble in the InAs-InP material system

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