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We present two-dimensional strain image mapping of the SiO2/Si interface on an Al/SiO2 patterned Si wafer using a modified Raman microscope. A positive shift in the Si Raman peak by approximately 1.0 cm−1, corresponding to 2.49×108 Pa compressive strain, was observed along particular edges between the Al/SiO2 patterned features and bare Si substrate. In addition to strain mapping, surface disorder in the Si wafer was also detected with this technique.

for helpful discussions about experimental technique and interpretation of results; Mr. Guenther Arndt for technical assistance in the construction of the apparatus; Dr. Andrew Block-Bolten and Mr. James Landers for assistance in designing and testing earlier prototypes of cells and furnaces; the U.S.

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