Strain imaging analysis of Si using Raman microscopy

Abstract

We present two-dimensional strain image mapping of the SiO2/Si interface on an Al/SiO2 patterned Si wafer using a modified Raman microscope. A positive shift in the Si Raman peak by approximately 1.0 cm−1, corresponding to 2.49×108 Pa compressive strain, was observed along particular edges between the Al/SiO2 patterned features and bare Si substrate. In addition to strain mapping, surface disorder in the Si wafer was also detected with this technique.

μ-Raman spectroscopy for stress analysis in high power silicon devices

“…In presence of strain, the triple degenerate optical phonons split their vibrating frequencies and the shift of Raman frequency can be observed [7]. By monitoring this frequency at different positions on the sample, a ''strain map'' can be obtained with micrometer spatial resolution [8,9]. The relation between strain or stress and the Raman frequency is often complex [10,11].…”

Study of structure and quality of different silicon oxides using FTIR and Raman microscopy

“…Fourier Transform Infrared (FTIR) spectroscopy provides a direct probe of molecular and submolecular structures via the excitation of vibrational states in the molecules over a specific mid-IR range (400-5000cm -1 ) [1][2][3][4][5][6][7][8]. Raman spectroscopy has been utilised recently to investigate stress and phase transformation in silicon structures [9][10][11][12][13][14]. The greatest advantages of both these techniques are its non-destructive character, the simplicity of the equipment set-up and the short time required for obtaining data, with essentially no sample preparation process required and no surface damage.…”

Micro-Raman study of free-standing porous silicon samples

“…Free-standing samples produced in experimental conditions similar to those used in the present work were already analyzed for their photoluminescence emission using UV pulsed excitation in the tens of nanoseconds range. 3 The samples exhibited, along with the well known red band, a blue band located around 3 eV. Those findings can also be invoked to qualitatively explain the occurrence and the intensity of the photoluminescence background observed in our micro-Raman spectra, which represents essentially the photoluminescence around 632.8 nm excited by HeNe laser line.…”