1992
DOI: 10.1149/1.2069336
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Photoelectrochemical Measurements of Thin Oxide Films: Multiple Internal Reflection Effects

Abstract: for helpful discussions about experimental technique and interpretation of results; Mr. Guenther Arndt for technical assistance in the construction of the apparatus; Dr. Andrew Block-Bolten and Mr. James Landers for assistance in designing and testing earlier prototypes of cells and furnaces; the U.S.

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Cited by 30 publications
(15 citation statements)
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“…As the r 0 values of the mixed oxide nanotubes are all smaller than 10 nm (retrieval length of TiO 2 50), holes are expected to escape recombination resulting in an enhanced photoconversion efficiency. 50,51 This is in agreement with van de Lagemaat and co-workers who observed a substantial enhancement of the quantum yield in porous SiC made by anodic etching in HF solutions. 51 Another factor could be that the NiO and MoO 3 help slow down charge recombination and/or facilitate the hole diffusion to the interface, which should improve the conversion efficiency.…”
Section: Optical and Photoelectrochemical Propertiessupporting
confidence: 90%
“…As the r 0 values of the mixed oxide nanotubes are all smaller than 10 nm (retrieval length of TiO 2 50), holes are expected to escape recombination resulting in an enhanced photoconversion efficiency. 50,51 This is in agreement with van de Lagemaat and co-workers who observed a substantial enhancement of the quantum yield in porous SiC made by anodic etching in HF solutions. 51 Another factor could be that the NiO and MoO 3 help slow down charge recombination and/or facilitate the hole diffusion to the interface, which should improve the conversion efficiency.…”
Section: Optical and Photoelectrochemical Propertiessupporting
confidence: 90%
“…In that paper a nonmonotonous dependence of the photocurrent intensity on the film thickness is also displayed. Such a phenomenon is caused by multiple internal reflections of the absorbed light at the metal/oxide/electrolyte interface, as formerly reported for anodic films on Nb [37,381 and Ti [39]. However, in the case of anodic Ti02 films, the change of crystallographic structure with increasing the film thickness (which implies a change of both the optical constants of the film and of the potential distribution inside the semiconducting oxide layer) hinders the possibility of simulating theoretically the experimental behaviour in a large thickness interval [39], at variance with the case of Nb205 anodic oxides [37, 381.…”
Section: Ef Ecsupporting
confidence: 59%
“…It was also reported that minority carriers generated within a distance from the surface equal to the sum of the depletion layer width and the diffusion length (retrieval length) escape recombination and reach the electrolyte 44 . Note that the relevant dimensional features of our TiON nanotube arrays (half the wall thickness) are all smaller than 10 nm, which is the range reported for crystalline TiO 2 retrieval length 45 . Therefore, bulk recombination is expected to be reduced and the photoconversion efficiency to be enhanced 4648 .…”
Section: Resultsmentioning
confidence: 67%