Ferroelectric field effect devices offer the possibility of nonvolatile active memory elements. Doped rare-earth manganates, which are usually associated with colossal magnetoresistive properties, have been used as the semiconductor channel material of a prototypical epitaxial field effect device. The carrier concentration of the semiconductor channel can be "tuned" by varying the manganate stochiometry. A device with La0.7Ca0.3MnO3 as the semiconductor and PbZr0.2Ti0.8O3 as the ferroelectric gate exhibited a modulation in channel conductance of at least a factor of 3 and a retention loss of 3 percent after 45 minutes without power.
The fast-decay component of the retained polarization in lead zirconate titanate ferroelectric capacitors was examined as a function of write/read voltage, number of cycles (fatigue), and temperature. The percentage of polarization loss within 1 s after the write pulse was found to be independent of the write/read voltage and only somewhat dependent upon the number of read/writ.e cycles and temperature. A preliminary model is presented based on depolarizing fields within the ferroelectric due to nonswitching layers at the top and bottom interfaces.
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