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There are many electronic and magnetic properties exhibited by complex oxides. Electronic phase separation (EPs) is one of those, the presence of which can be linked to exotic behaviours, such as colossal magnetoresistance, metal-insulator transition and high-temperature superconductivity. A variety of new and unusual electronic phases at the interfaces between complex oxides, in particular between two non-magnetic insulators LaAlo 3 and srTio 3 , have stimulated the oxide community. However, no EPs has been observed in this system despite a theoretical prediction. Here, we report an EPs state at the LaAlo 3 /srTio 3 interface, where the interface charges are separated into regions of a quasi-two-dimensional electron gas, a ferromagnetic phase, which persists above room temperature, and a (superconductor like) diamagnetic/paramagnetic phase below 60 K. The EPs is due to the selective occupancy (in the form of 2D-nanoscopic metallic droplets) of interface sub-bands of the nearly degenerate Ti orbital in the srTio 3 . The observation of this EPs demonstrates the electronic and magnetic phenomena that can emerge at the interface between complex oxides mediated by the Ti orbital.

Ferroelectric field effect devices offer the possibility of nonvolatile active memory elements. Doped rare-earth manganates, which are usually associated with colossal magnetoresistive properties, have been used as the semiconductor channel material of a prototypical epitaxial field effect device. The carrier concentration of the semiconductor channel can be "tuned" by varying the manganate stochiometry. A device with La0.7Ca0.3MnO3 as the semiconductor and PbZr0.2Ti0.8O3 as the ferroelectric gate exhibited a modulation in channel conductance of at least a factor of 3 and a retention loss of 3 percent after 45 minutes without power.

We report on the realization of wide band gap (5–6 eV), single-phase, metastable, and epitaxial MgxZn1−xO thin-film alloys grown on sapphire by pulsed laser deposition. We found that the composition, structure, and band gaps of the MgxZn1−xO thin-film alloys depend critically on the growth temperature. The structural transition from hexagonal to cubic phase has been observed for (Mg content greater than 50 at. %) (1⩾x⩾0.5) which can be achieved by growing the film alloys in the temperature range of 750 °C to room temperature. Interestingly, the increase of Mg content in the film has been found to be beneficial for the epitaxial growth at relatively low growth temperature in spite of a large lattice mismatch between sapphire and cubic MgZnO alloys.

The recent discovery of ferromagnetism above room temperature in low-temperature-processed MnO(2)-ZnO has generated significant interest. Using suitably designed bulk and thin-film studies, we demonstrate that the ferromagnetism in this system originates in a metastable phase rather than by carrier-induced interaction between separated Mn atoms in ZnO. The ferromagnetism persists up to approximately 980 K, and further heating transforms the metastable phase and kills the ferromagnetism. By studying the interface diffusion and reaction between thin-film bilayers of Mn and Zn oxides, we show that a uniform solution of Mn in ZnO does not form under low-temperature processing. Instead, a metastable ferromagnetic phase develops by Zn diffusion into the Mn oxide. Direct low-temperature film growth of Zn-incorporated Mn oxide by pulsed laser deposition shows ferromagnetism at low Zn concentration for an optimum oxygen growth pressure. Our results strongly suggest that the observed ferromagnetic phase is oxygen-vacancy-stabilized Mn(2-x)Zn(x)O(3-delta.).

The relative importance of atomic defects and electron transfer in explaining conductivity at the crystalline LaAlO3/SrTiO3 interface has been a topic of debate. Metallic interfaces with similar electronic properties produced by amorphous oxide overlayers on SrTiO3 [Y. Chen et al., Nano Lett. 11, 3774 (2011); S. W. Lee et al., Nano Lett. 12, 4775 (2012)] have called in question the original polarization catastrophe model [N. Nakagawa et al., Nature Mater. 5, 204 (2006)]. We resolve the issue by a comprehensive comparison of (100)-oriented SrTiO3 substrates with crystalline and amorphous overlayers of LaAlO3 of different thicknesses prepared under different oxygen pressures. For both types of overlayers, there is a critical thickness for the appearance of conductivity, but its value is always 4 unit cells (∼1.6 nm) for the oxygen-annealed crystalline case, whereas in the amorphous case the critical thickness could be varied in the range 0.5 to 6 nm according to the deposition conditions. Subsequent ion milling of the overlayer restored the insulating state for the oxygen-annealed crystalline heterostructures but not for the amorphous ones. Oxygen post-annealing removes the oxygen vacancies, and the interfaces become insulating in the amorphous case, but the interfaces with a crystalline overlayer remain conducting with reduced carrier density. These results demonstrate that oxygen vacancies are the dominant source of mobile carriers when the LaAlO3 overlayer is amorphous, while both oxygen vacancies and polarization catastrophe contribute to the interface conductivity in unannealed crystalline LaAlO3/SrTiO3 heterostructures, and the polarization catastrophe alone accounts for the conductivity in oxygen-annealed crystalline LaAlO3/SrTiO3 heterostructures. Furthermore, it was found that the crystallinity of the LaAlO3 layer is crucial for the polarization catastrophe mechanism in the case of crystalline LaAlO3 overlayers. PACS numbers: 73.20.-r 73.21.Ac 73.40.-c 71.23.CqThe two-dimensional electron gas (2DEG) appearing at the interface between the band insulators LaAlO 3 (LAO) and SrTiO 3 (STO) has attracted much attention since its discovery by Ohtomo and Hwang [1]. It has stimulated a substantial body of experimental and theoretical work [2-25], but, its origin is still controversial [26]. Three different mechanisms have been proposed. First is interface electronic reconstruction to avoid the polarization catastrophe induced by the discontinuity at the interface between polar LAO and nonpolar STO [2][3][4]. Second is doping by thermal interdiffusion of Ti/Al or La/Sr atoms at the interface [13]. A third possible mechanism is creation of oxygen vacancies in STO substrates during the deposition process [9][10][11]27,28]. Oxygen vacancies are known to introduce a shallow intragap donor level close to the conduction band of STO [29], and their action may be specific to this one substrate. The thermal interdiffusion mechanism was discounted in recent work [25], which studied the effect of a mixed interface layer. It i...

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Occurrence of room temperature ferromagnetism is demonstrated in pulsed laser deposited thin films of Sn 1-x Co x O 2-δ (x<0.3). Interestingly, films of Sn 0.95 Co 0.05 O 2-δ grown on R-plane sapphire not only exhibit ferromagnetism with a Curie temperature close to 650 K, but also a giant magnetic moment of 7 ± 0.5 µ B /Co, not yet reported in any diluted magnetic semiconductor system. The films are semiconducting and optically highly transparent.