The Na2 3 3Πg state adiabatically dissociates to the 3s+4p atomic limit. The 3 3Πg levels below the 3s+3d atomic limit have been observed by perturbation facilitated optical–optical double resonance (PFOODR) fluorescence excitation spectroscopy. Energy levels above the 3s+3d atomic limit cannot be observed by detecting molecular fluorescence but are observable by detecting atomic 3d→3p fluorescence. The 3 3Πg state interacts with the 3s+3d 2 3Πg state. At lower energy this interaction is responsible for many perturbations between bound vibrational levels of these two states. Above the 3s+3d limit, as a result of this interaction, the 3 3Πg state is strongly predissociated and the linewidths of levels close to the 3s+3d limit are about 22 cm−1. The predissociation interaction is due to an avoided crossing between the adiabatic 2 3Πg and 3 3Πg states at R≈2.85 Å. Weak predissociation of the 4 3Σg+ and 2 3Δg states are also observed and discussed.

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A rice PAL (phenylalanine ammonia-lyase) gene sequence ( rPAL-P5), which is highly similar to and likely the same as a previously described rice ZB8PAL gene, including the 5'-upstream and exon I coding regions of PAL, was isolated using PCR amplification. The expression of several PALs, including rPAL-P5, was strongly induced following inoculation with Pyricularia oryzae or treatment with a P. oryzae elicitor. To identify the promoter region induced by the P. oryzae elicitor, we constructed and subsequently transformed rPAL-P5 promoter deletion series into rice calli using particle bombardment. Results from both elicitor-inducible reporter gene and gel mobility shift assays demonstrated that the sequence -349 to -256 of the rPAL-P5 promoter includes a cis-element involved in the induction of P. oryzae.

Dual lens dark field electron holography and Moiré fringe mapping from dark field scanning transmission electron microscopy are used to map strain distributions at high spatial resolution in Si devices processed with stress memorization techniques (SMT). It provides experimental evidence that strain in the Si channel is generated by dislocations resulting from SMT. The highest value of strain, up to 1.1% (1.9 GPa in stress) occurs at the Si surface along the channel direction: ⟨110⟩. An increase of ∼0.2% strain in the channel is observed after removing the poly-Si gate through the replacement high-k metal gate process.

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The far-field asymptotic solutions for the second-order diffracted waves have been developed, both in three and two-dimensional problems. The radiation conditions for the second-order diffracted waves are derived by using the asymptotic solutions. The nonlinear wave forces on a half-circular cylinder on seabed are presented by using finite element methods with the radiation conditions imposed on the artificial boundaries.

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