Analytical expressions are found for the mobility of a degenerate electron gas in a quantum wire for three scattering mechanisms: on ionized impurities and on piezoacoustic and deformation acoustic phonons. The expressions allow one to analyze the concentration, temperature, and dimensional dependences of the electron mobility.
The effect of γ ray radiation on the electrical properties of heat treated Tb 0.01 Sn 0.99 Se (sample 1) and Tb 0.05 Sn 0.95 Se (sample 2) samples is studied. It is found that, as a result of irradiation with γ ray 1.25 MeV photons, the charge carrier concentration decreases in the temperature range T = 77-200 K by 17 and 6.3% for samples 1 and 2, respectively. It is assumed that, in the course of irradiation with γ ray photons, terbium impurity atoms are located between sites of the crystal lattice; in addition, Frenkel defects are formed.
In the given paper, the temperature dependences ([Formula: see text]–300 K) of the green band intensity at wavelengths [Formula: see text] nm and [Formula: see text] nm have been measured and observed, respectively, from the polished and unpolished surface (PS and unPS) of a polycrystalline CVD (chemical vapor deposition) ZnSe sample upon excitation by X-ray quanta ([Formula: see text]. In both cases, the activation energy of thermal quenching has been determined, and the reasons for thermal quenching have been considered in detail. Along with XRL spectra analysis, the temperature behavior of the green band observed upon excitation by an ultraviolet (UV) laser (He–Cd, [Formula: see text] nm) from the PS and unPS in the temperature range [Formula: see text]–200 K has been discussed in more detail.
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