Significant improvement in frequency doubling efficiency of a cw output of a GaAlAs laser diode is described. Up to 0.72 mW of 421 nm power was generated by illuminating a KNbO3 crystal with a 270 mW diffraction-limited beam generated by an externally injection-locked laser diode array, operating in a single-mode and single-far-field lobe.
We report a simple optical correlation technique which is capable of measuring the intrinsic response speeds of fast photosensitive electronic devices. The appeal of the method is that neither high-speed electrical connections to a device nor cross-correlation measurements between two devices are required. An example is given of measurements of the response speed of a GaAs Schottky barrier photodiode. Under appropriate illumination conditions the detector is found to be sufficiently fast to be capable of replacing optical second harmonic generation techniques for monitoring the quality of a beam of 1.5 ps pulses.
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