GaAs p-n junctions were grown by liquid-phase epitaxy using Ge as the acceptor and Sn as the donor. Abrupt junctions with well-controlled carrier concentrations in both the n and the p layers were produced. High-quality varactors and double-drift GaAs IMPATT diodes were fabricated. cw output power of 3.0 W with 15.8% efficiency at 8.9 GHz and pulse output power of 4.1 W with 20.7% efficiency at 10.56 GHz were observed.
The effects of the voltage swing, peak current-to-capacity ratio (IP/Cjv), zinc concentration, and lithium on the degradation of the peak tunnel current are examined in zinc-doped GaAs tunnel diodes.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.