Ge-doped p-type epitaxial GaAs for microwave device application

Abstract

GaAs p-n junctions were grown by liquid-phase epitaxy using Ge as the acceptor and Sn as the donor. Abrupt junctions with well-controlled carrier concentrations in both the n and the p layers were produced. High-quality varactors and double-drift GaAs IMPATT diodes were fabricated. cw output power of 3.0 W with 15.8% efficiency at 8.9 GHz and pulse output power of 4.1 W with 20.7% efficiency at 10.56 GHz were observed.

Growth and Evaluation of Epitaxial GaAs for Microwave Devices

“…The results indicate that it is suitable for growing high quality epitaxial G a A s for microwave specifications (2,11).…”

“…The epitaxial layers h a v e to be u n c o mpensated with well-controlled uniform carrier concentrations and a high degree of crystalline perfection. The liquid phase epitaxial technology described above can be used to grow n and p layers of GaAs consecutively in one heat cycle, w i t h the r e q u i r e d quality, if suitable dopants are selected (11). To insure m i n im u m or zero cross-contamination and compensation, the dopants must have low vapor pressure and low distribution coefficient under the epitaxial growth conditions.…”

“…This was Paper 229 presented at the Miami Beach, Florida, Meeting of the Society, Oct. [8][9][10][11][12][13] 1972.…”

“…Besides the Gunn device data, results with double drift and high-low structure avalanche devices are also listed. Double-drift avalanche devices are fabricated with 20.7% pulsed and 16.3% ew efficiency and power outputs of 4.1W and 2.35W, respectively, in X-band (11,31). High-low avalanche devices give 19.6% efficiency and 2.2W cw at around 10 GHz (32).…”

“…A schematic drawing of the basic boat design has been published (11). Figure 1 presents a photograph of a slightly different design.…”