Gallium arsenide and (alga)as devices prepared by Liquid-Phase epitaxy (Review Article)

Kressel, H.

doi:10.1007/bf02651398

Cited by 35 publications

(2 citation statements)

References 72 publications

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“…As a consequence the initial investigations centred on examining the effect of the growth parameters on the electrical properties of the epilayers to see if conditions more favourable for the production of n-type material could be obtained. LPE GaAs:Si is nor p-type depending on the growth conditions (Kressel 1974). A similar situation also exists for MBE GaAs:Ge where n-or p-type material is produced depending on the arsenic-to-gallium flux ratio and substrate temperature used during growth (Cho and Hayashi 1971b, Wood et al 1979, Kiinzel et ul 1980.…”

Section: Discussionmentioning

confidence: 90%

An investigation into silicon doping of MBE (100) GaAs

Parker¹,

Kubiak²,

King³

et al. 1981

J. Phys. D: Appl. Phys.

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A study of the silicon doping of MBE (molecular beam epitaxy) (100) GaAs is presented. The effects of the various growth parameters on the electrical properties of the layers have been investigated. In particular the influence of the As4:Ga flux ratio on the Si incorporation is considered. A model based on the site occupancy of the Si dopant and an As-induced defect Si-impurity complex is invoked to account for the observed electrical properties.

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