Growth and Evaluation of Epitaxial GaAs for Microwave Devices

Rosztoczy, F.E.; Kinoshita, J.

doi:10.1149/1.2401833

Cited by 27 publications

(1 citation statement)

References 15 publications

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“…Tin is selected as n-type dopant in spite of its amphoteric property because of its extremely low vapour pressure, low segregation coefficient under the epitaxial growth elsewhere (Harris and Synder 1969;Vilms and Garrett 1972;Rosztoczy and Kinoshita 1974;Toyada et al 1976).…”

Section: Doping Study With Tinmentioning

confidence: 99%

Surface morphology and properties of GaAs epilayers controlled by temperature difference method of liquid phase epitaxy

Wei

Lü

et al. 1986

Bull. Mater. Sci.

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Abslraet. Epilayers of gallium arsenide were grown by using the steady-state temperature difference method of liquid phase epitaxy. The surface of grown layers was smooth and shiny. Carder concentrations of films varying from 1016 to 1017 cm-3 could be obtained with good reproducibility. The surface morphology growth rate, carrier concentration and Hall mobility of the epilayers were studied. Several distinct types of surface features were also investigated and explained. A segregation coefficient for the net carrier concentration versus tin concentration in the growth melt was calculated as 1-84 x 10-4 at 700°C for (100) GaAs substrate. Thickness control for epilayers down to submicron can be obtained reproducibly.

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Section: Doping Study With Tinmentioning

confidence: 99%

Surface morphology and properties of GaAs epilayers controlled by temperature difference method of liquid phase epitaxy

Wei

Lü

et al. 1986

Bull. Mater. Sci.

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ChemInform Abstract: GROWTH AND EVALUATION OF EPITAXIAL GAAS FOR MICROWAVE DEVICES

Rosztoczy¹,

Kinoshita²

1974

Chemischer Informationsdienst

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On the role of space-charge scattering in epitaxial GaAs

Pődör

Nádor

Bertóti

1975

Phys. Stat. Sol. (a)

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Electron mobility was measured in liquid phase epitaxial GaAs of moderate purity. The relevant charge carrier scattering mechanisms were investigated. It is found that the measured mobility can only be interpreted taking into account scattering on space‐charge regions besides lattice and impurity scattering. The implications of space‐charge scattering are discussed and it is suggested that this scattering mechanism is an almost universally occurring phenomenon in GaAs and presumably in other compound semiconductors, too.

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Growth and Evaluation of Epitaxial GaAs for Microwave Devices

Cited by 27 publications

References 15 publications

Surface morphology and properties of GaAs epilayers controlled by temperature difference method of liquid phase epitaxy

Surface morphology and properties of GaAs epilayers controlled by temperature difference method of liquid phase epitaxy

ChemInform Abstract: GROWTH AND EVALUATION OF EPITAXIAL GAAS FOR MICROWAVE DEVICES

On the role of space-charge scattering in epitaxial GaAs

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